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pro vyhledávání: '"Kevin A. Pears"'
Autor:
Kevin A. Pears, Jens Stolze
Publikováno v:
Microelectronic Engineering. 81:7-14
Generating suitable passivation on the carbon sidewall is a major challenge facing carbon etching especially for films thicker than 500nm. Patterning carbon hard mask stacks for sub 90nm technologies was tested for three different O"2-based chemistri
Autor:
Ulrich Egger, Matthias Markert, Alessia Scire, Ralf Koepe, Kevin A. Pears, Momtchil Stavrev, Lee Donohue
Publikováno v:
Microelectronic Engineering. 81:156-161
Carbon hard mask structures have been used to etch a variety of materials typically used in sub 90nm DRAM manufacture. The results indicate that carbon hard masks can be used very effectively to structure oxide, nitride and metal films giving the CD
Autor:
Kevin A. Pears
Publikováno v:
Microelectronic Engineering. 77:255-262
An investigation was made to determine whether methane (CH"4) could assist with polymer formation during fabrication of amorphous carbon hard masks. The results indicated that when CH"4 is added to a simple O"2/N"2 chemistry superior sidewall profile
Autor:
Polowy, Kevin, Howard, Brendan
Publikováno v:
Video Store Magazine. 11/28/2004, Vol. 26 Issue 49, p27-27. 1/3p. 1 Color Photograph.
Autor:
Lee, Forrest, Howard, Brendan
Publikováno v:
Video Store Magazine. 11/28/2004, Vol. 26 Issue 49, p27-27. 1/3p. 3 Color Photographs.