Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Keunjoo Kim"'
Publikováno v:
Philosophical Magazine. 99:2063-2088
We investigated superhydrophobic Si nanosurfaces similar to the lotus leaf by performing a hierarchical nanotexturing process on micropyramidal Si surfaces. The process was carried out using a meta...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d04d7638b8082de6c7b4f7210e237895
https://doi.org/10.1080/14786435.2019.1606955
https://doi.org/10.1080/14786435.2019.1606955
Publikováno v:
Solar Energy Materials and Solar Cells. 234:111414
We investigated oxygen passivation at the interfacial silicon surface on the highly phosphorus-doped region by oxygen ion implantation and showed resulting enhanced electrical properties of silicon solar cells. The oxygen ion implantation converts th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e8d7cfa11889218dc576c7121bd9b4c
https://doi.org/10.1016/j.solmat.2021.111414
https://doi.org/10.1016/j.solmat.2021.111414
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 13:1576-1583
We investigated the light absorption of multi-antireflective layers on the microtextured surface of a crystalline silicon solar cell. Triple antireflection coating layers were deposited with SiNx/SiO2/SiNx thin films. A 20 nm SiO2 layer was sandwiche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::164285ec6668bbea32e50539ae39068a
https://doi.org/10.1166/jno.2018.2390
https://doi.org/10.1166/jno.2018.2390
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 13:1557-1563
We investigated the effect of thermal annealing on the performances of Si solar cells. The Si solar cells were fabricated on p-type microtextured Si wafers using a standard cell fabrication process. The fabricated cells were annealed at 250 °C for 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3451195d7c941b6f0405aedaf6b8756b
https://doi.org/10.1166/jno.2018.2391
https://doi.org/10.1166/jno.2018.2391
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 13:1591-1597
We investigated the surface passivation of silicon solar cells by nitrogen ion implantation. The nitrogen ion was implanted with the energy of 20 keV at a twist angle of 22.5° from the Si 〈100〉 direction and a tilt angle of 7°. The ion concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ff2789b92fc94d8b99c15f31729f045
https://doi.org/10.1166/jno.2018.2392
https://doi.org/10.1166/jno.2018.2392
Publikováno v:
Philosophical Magazine. 98:2965-2981
We investigated the oxidation behaviour of an amorphous GaAs thin film deposited onto a micro/nanotextured Si surface by an electron beam. After the deposited film was exposed to air, microcrystallites were formed with octahedral cubic and monoclinic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56b2d84ecd83d934e8f95d4720b220c6
https://doi.org/10.1080/14786435.2018.1512761
https://doi.org/10.1080/14786435.2018.1512761
Publikováno v:
Nanoscience and Nanotechnology Letters. 10:497-502
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bde2089b2070bd61a56a3b435529b97
https://doi.org/10.1166/nnl.2018.2677
https://doi.org/10.1166/nnl.2018.2677
Publikováno v:
Nanoscience and Nanotechnology Letters. 10:474-478
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1996c1580142c40dbc540c2d077cab4
https://doi.org/10.1166/nnl.2018.2676
https://doi.org/10.1166/nnl.2018.2676
Publikováno v:
Solar Energy Materials and Solar Cells. 159:20-25
We investigated Schottky-type edge passivation of Si solar cells using Ag nanodots and the enhancement of cell conversion efficiency by improving the fill factor. The threshold voltage for the termination of photocurrent is increased by about 0.13 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82897a93ff5bd2fdcde57e5db3b789f3
https://doi.org/10.1016/j.solmat.2016.08.033
https://doi.org/10.1016/j.solmat.2016.08.033
Publikováno v:
Solar Energy Materials and Solar Cells. 220:110858
We investigated low energy nitrogen ion implantation into the SiNx/Si interfacial layer of silicon solar cells using various energies and fluences, followed by a thermal annealing process. The low energy implanted nitrogen ions penetrated into the Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10230b8390ebf3c7a9aed73a71c268fb
https://doi.org/10.1016/j.solmat.2020.110858
https://doi.org/10.1016/j.solmat.2020.110858