Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Keuning W"'
Polytetrafluoroethylene (PTFE) samples were treated by a remote atmospheric pressure microwave plasma torch and analyzed by water contact angle (WCA) and X-ray photoelectron spectroscopy (XPS). In the case of pure argon plasma a decrease of WCA is ob
Externí odkaz:
http://arxiv.org/abs/1303.3910
Autor:
Erkens, I. J. M., Verheijen, M. A., Knoops, H. C. M., Keuning, W., Roozeboom, F., Kessels, W. M. M.
Publikováno v:
Journal of Chemical Physics; 2017, Vol. 146 Issue 5, p1-8, 8p, 3 Diagrams, 3 Charts, 4 Graphs
Autor:
Starostin, S.A., Keuning, W., Schalken, J., Creatore, M., Kessels, W.M. M., Bouwstra, J.B., van de Sanden, M.C. M., de Vries, H.W.
Publikováno v:
Plasma Processes and Polymers, 13, 311-315
Plasma Processes and Polymers, 13(3), 311-315. Wiley-VCH Verlag
Plasma Processes and Polymers, 13(3), 311-315. Wiley-VCH Verlag
The synergy between fast (1600 nm · min−1), roll-to-roll plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 layers and plasma-assisted atomic layer deposited (PA-ALD) ultra-thin Al2O3 films has been investigated in terms of moisture permeation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::01af3903e5fdc5ed8b625f565b1c5a96
https://doi.org/10.1002/ppap.201500096
https://doi.org/10.1002/ppap.201500096
Autor:
Bakker, N.J., Creatore, M., Schropp, R.E.I., Kessels, W.M.M., Williams, B.L., Smit, S., Kniknie, B.J., Keuning, W.
Publikováno v:
Progress in Photovoltaics: Research and Applications, 23(11), 1516-1525. Wiley
Progress in Photovoltaics: Research and Applications, 11, 23, 1516-1525
Progress in Photovoltaics: Research and Applications, 11, 23, 1516-1525
An equivalent circuit model, which allows for the presence of three types of shunting pathways, has been developed to describe the dark J-V characteristics in CIGS solar cells. Excellent agreement between the model and experimental data was apparent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::841385989257dfa7d827e2f551761b0f
http://resolver.tudelft.nl/uuid:bb798fb0-883e-406f-9b9c-f724575f5f6f
http://resolver.tudelft.nl/uuid:bb798fb0-883e-406f-9b9c-f724575f5f6f
Publikováno v:
None
Twirre is a new architecture for mini-UAV platforms designed for autonomous flight in both GPS-enabled and GPS-deprived applications. The architecture consists of low-cost hardware and software components. High-level control software enables autonomo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2758a4a0c0c2462707f3808ae9f46d2a
Autor:
Aslam, N., Longo, V., Keuning, W., Roozeboom, F., Kessels, W.M.M., Waser, R., Hoffmann-Eifert, S.
Publikováno v:
Physica Status Solidi A : Applications and material science, 211. Wiley-VCH Verlag
Strontium titanate, SrxTiyOz (STO), thin films with various cation stoichiometries were deposited by plasma-assisted atomic layer deposition (ALD) using cyclopentadienyl-based metal precursors and oxygen plasma as counter-reactant. [Sr]/([Sr]¿+¿[Ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::32728736f5ea6d70bcd07887559a38d6
https://research.tue.nl/nl/publications/7fc9d8a9-b3cd-43f5-96d5-400d59b55f45
https://research.tue.nl/nl/publications/7fc9d8a9-b3cd-43f5-96d5-400d59b55f45
Autor:
Roozeboom, F., Kniknie, B.J., Lankhorst, A.M., Winands, G.J.J., Knaapen, R., Smets, M., Poodt, P., Dingemans, G., Keuning, W., Kessels, W.M.M., Kondo, K., Pdolaha-Murphy, E.J., Mathad, S.
Publikováno v:
Processing Materials of 3D Interconnects, Damascene and Electronics Packaging 4 (PRiME 2012), October 7, 2012-October 12, 2012, Honolulu, HI, 73-82
STARTPAGE=73;ENDPAGE=82;TITLE=Processing Materials of 3D Interconnects, Damascene and Electronics Packaging 4 (PRiME 2012), October 7, 2012-October 12, 2012, Honolulu, HI
32, 50, 73-82
STARTPAGE=73;ENDPAGE=82;TITLE=Processing Materials of 3D Interconnects, Damascene and Electronics Packaging 4 (PRiME 2012), October 7, 2012-October 12, 2012, Honolulu, HI
32, 50, 73-82
Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 polymerizing as a protecting fluorocarbon deposit on the si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbfd9f026d1c9eb045d4821684e51572
https://research.tue.nl/en/publications/9f3f5118-ad7b-4845-8b55-37f8f7b1b539
https://research.tue.nl/en/publications/9f3f5118-ad7b-4845-8b55-37f8f7b1b539
Autor:
Roozeboom, F., Kniknie, B., Lankhorst, A.M., Winands, G., Poodt, P., Dingemans, G., Keuning, W., Kessels, W.M.M., Bullema, J.E., Bressers, P.M.M.C., Oosterhuis, G., Mueller, M., Huis in 't Veld, A.J.
Publikováno v:
Proceedings of the 12th Annual PanPacific Microelectronics Symposium 2012, 1-9
STARTPAGE=1;ENDPAGE=9;TITLE=Proceedings of the 12th Annual PanPacific Microelectronics Symposium 2012
STARTPAGE=1;ENDPAGE=9;TITLE=Proceedings of the 12th Annual PanPacific Microelectronics Symposium 2012
In this work we will review our recent work on novel alternative and disruptive technology concepts with industrial potential for cost-effective and high-speed interconnect manufacturing, in particular on the creation (drilling and filling) of advanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::ff4aab5a593e686b6ad8ecf1b526daf3
https://research.utwente.nl/en/publications/technology-alternatives-towards-lowcost-and-highspeed-interconnect-manufacturing(0810562e-1070-41a4-bb1e-66d83dbab3bc).html
https://research.utwente.nl/en/publications/technology-alternatives-towards-lowcost-and-highspeed-interconnect-manufacturing(0810562e-1070-41a4-bb1e-66d83dbab3bc).html
Publikováno v:
Journal of Applied Physics, 112, 04370
Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f20ef8b62cd1b3bf071d22893eb55a35
https://www.differ.nl/bibcite/reference/7545
https://www.differ.nl/bibcite/reference/7545
Publikováno v:
Journal of Applied Physics, 112, 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7a723aa6fb87c4ff94dcb9fc38c65faa
https://www.differ.nl/bibcite/reference/7628
https://www.differ.nl/bibcite/reference/7628