Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Keum-Dong Jung"'
Autor:
Oh-Jo Kwon, Seong-Joo Lee, Woojin Jang, Gyeong-Gu Kang, Keum-Dong Jung, Hyun-Sik Kim, Seok-Tae Koh, Jiho Lee
Publikováno v:
VLSI Circuits
This paper presents an OLED/μLED display driver IC with cascaded loading-free capacitive interpolation (LFCI) DAC and a high-slew buffer amplifier. The 12-bit color-depth is realized by a combination of 7-bit R-DAC and proposed 5-bit LFCI DAC while
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c9da974b7a7a4da88c9385f456a4593
https://doi.org/10.23919/vlsicircuits52068.2021.9492490
https://doi.org/10.23919/vlsicircuits52068.2021.9492490
Autor:
Mi Seon Seo, Keum Dong Jung, Daeun Lee, Kim Tae Young, Jong-Ho Lee, Hyuck-In Kwon, Jong-In Kim, Je-Hun Lee, In-Tak Cho, Mun Soo Park, Chan-Yong Jeong
Publikováno v:
IEEE Electron Device Letters. 36:579-581
Local degradation caused by drain bias ( $V_{\mathrm {\mathbf {DS}}}$ ) stressing is recently considered as a key issue in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this letter, we investigate the instability of turned-OFF a-IGZO TF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6056b6559426a8120c3caa2ab42303b9
https://doi.org/10.1109/led.2015.2424966
https://doi.org/10.1109/led.2015.2424966
Autor:
Mun-Soo Park, Dongsik Kong, Dae Hwan Kim, Sunwoong Choi, Jaehyeong Kim, Minkyung Bae, Dong Myong Kim, Moon-Hyun Yoo, Hyun Kwang Jeong, Keum-Dong Jung, Inseok Hur, Woojoon Kim, Yongsik Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 43:1133-1136
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1106198234a81de239c467e3fc99bd42
https://doi.org/10.1002/j.2168-0159.2012.tb05993.x
https://doi.org/10.1002/j.2168-0159.2012.tb05993.x
Publikováno v:
IEEE Transactions on Electron Devices. 56:431-440
A new parameter extraction method is proposed for the series resistance of thin-film transistors (TFTs). By analyzing the gate-source overlap region of staggered structure TFTs, the model for the series resistance is derived and utilized for the para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a935464a4599552d06c3e93e987378
https://doi.org/10.1109/ted.2008.2010579
https://doi.org/10.1109/ted.2008.2010579
Publikováno v:
Japanese Journal of Applied Physics. 47:3174-3178
An analytic current?voltage (I?V) equation for top-contact organic thin film transistors (OTFTs) is derived by analyzing the channel and the overlap region separately. From the analysis on the overlap region, the series resistance of OTFTs is found t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a8014344380a2614b51e3d7e7333bf4
https://doi.org/10.1143/jjap.47.3174
https://doi.org/10.1143/jjap.47.3174
Publikováno v:
Japanese Journal of Applied Physics. 46:2661-2665
As the channel length of pentacene organic thin-film transistors (OTFTs) is reduced, the transfer curve is consistently shifted to the positive direction and hence the drain current at the zero gate voltage increases, presumably due to the short-chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ded36830c69d14192acfcd2a6ef678bb
https://doi.org/10.1143/jjap.46.2661
https://doi.org/10.1143/jjap.46.2661
Autor:
Dong-Wook Park, Byeongju Kim, Jong Duk Lee, Hyungcheol Shin, Keum-Dong Jung, Cheon An Lee, Byung-Gook Park
Publikováno v:
Japanese Journal of Applied Physics. 46:2640-2644
Pentacene-based organic thin-film transistors (OTFTs) and organic circuits are fabricated using a plasma-enhanced chemical vapor deposition (PECVD) SiO2/cross-linked poly(vinyl alcohol) (PVA) double-layer insulator. A considerable reduction in hyster
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7252e5959cb4170522819cbc7d3721a9
https://doi.org/10.1143/jjap.46.2640
https://doi.org/10.1143/jjap.46.2640
Publikováno v:
Synthetic Metals. 156:196-201
Multiple top-contact OTFTs with various channel lengths ( L c ) were successfully scaled-down to the L c of 1.8 μm by using the membrane shadow mask and the interface between the evaporated Au and pentacene was analyzed based on the channel resistan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49c7c6753ff455116fbc5ba5e6e5a7a8
https://doi.org/10.1016/j.synthmet.2005.11.012
https://doi.org/10.1016/j.synthmet.2005.11.012
Autor:
Mihee Uhm, Euiyoun Hong, Mun-Soo Park, Sunwoong Choi, Dong Myong Kim, Ja Sun Shin, Hagyoul Bae, Won Hee Lee, Daeyoun Yun, Dae Hwan Kim, Inseok Hur, Keum-Dong Jung
Publikováno v:
IEEE Electron Device Letters. 33:534-536
We report a hybrid technique for extraction of structure- and gate-bias-dependent parasitic source/drain (S/D) resistances (RS and RD) in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). In the proposed technique, C- V and I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::906c1dd128f67d66a05b4f31e366d761
https://doi.org/10.1109/led.2012.2182752
https://doi.org/10.1109/led.2012.2182752
Autor:
Jong-Ho Lee, Jong-In Kim, Chan-Yong Jeong, Mun Soo Park, Hyuck-In Kwon, Ki-Hwan Kim, Keum Dong Jung, Mi Seon Seo
Publikováno v:
Semiconductor Science and Technology. 32:035017
We propose a new local degradation model based on a non-uniform increase in donor-like traps (DLTs) determined by distributions of an electric field and measured device temperature in amorphous In–Ga–Zn–O (a-IGZO) thin film transistors (TFTs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3276fdf81c0047ea9efce145b111e80a
https://doi.org/10.1088/1361-6641/aa59a6
https://doi.org/10.1088/1361-6641/aa59a6