Zobrazeno 1 - 10
of 560
pro vyhledávání: '"Keshav N"'
Autor:
Keshav N. Shrivastava
Publikováno v:
Maejo International Journal of Science and Technology, Vol 4, Iss 01, Pp 53-63 (2010)
The electronic band structures of several models of vanadium oxide are calculated. In the models 1-3, every vanadium atom is connected to 4 oxygen atoms and every oxygen atom is connected to 4 vanadium atoms. In model 1, a=b=c 2.3574 Å; in model 2,
Externí odkaz:
https://doaj.org/article/7f85df871a2a4dca9c1dc2ac9a1df2e5
Autor:
Keshav N. Shrivastava
Publikováno v:
Maejo International Journal of Science and Technology, Vol 4, Iss 01, Pp 20-32 (2010)
The quantum Hall effect and the emergence of the value of h/e2 is found to be understood within five steps. Here h is the Planck's constant and e is the charge of the electron. The Hall resistivity is found to become a function of spin. For positive
Externí odkaz:
https://doaj.org/article/dd1e26c8257149d7abdb3fd141301bff
Autor:
Keshav N. Shrivastava
Publikováno v:
Maejo International Journal of Science and Technology, Vol 2, Iss 02, Pp 285-297 (2008)
The Hall effect is the generation of a current perpendicular to both the direction of the applied electric as well as magnetic field in a metal or in a semiconductor. It is used to determine the concentration of electrons. The quantum Hall effect wit
Externí odkaz:
https://doaj.org/article/cd1276a034b54442af00b979942e680e
Publikováno v:
In Materials Today: Proceedings 2021 44 Part 1:1478-1487
Autor:
Shrivastava, Keshav N.
We find that the nuclear-spin polarization has not been treated correctly. The references given are those of wrong papers. The credits assigned for discoveries are also not correct. Incorrect theories have been cited. The reference to the correct the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0403201
Autor:
Shrivastava, Keshav N.
The quantum Hall effect in ultra-high mobility GaAs/AlGaAs has been measured and plateaus are found at many different fractions. The resistivity is quantized as \rho =h/ie^2 where i exhibits many different values. The fractions 5/3, 8/5, 11/7, 14/9,
Externí odkaz:
http://arxiv.org/abs/cond-mat/0402438
Autor:
Shrivastava, Keshav N.
Usually the Landau levels are given by (n+1/2)\hbar\omega_c with \hbar\omega_c=eB/mc. We find that there are clusters of electrons with localization so that the orbital angular momentum is not zero. There are interactions which transfer the electrons
Externí odkaz:
http://arxiv.org/abs/cond-mat/0307409
Autor:
Shrivastava, Keshav N.
Recent experimental measurements of the microwave absorption in the frequency range 1-4 GHz show peaks at several values of the filling factor,\nu=nh/eB. Since the filling factor multiplies the magnetic field, it is similar to the Lande's splitting f
Externí odkaz:
http://arxiv.org/abs/cond-mat/0307281
Autor:
Shrivastava, Keshav N.
The effective fractional charges like 17/4 or 19/4 are explained by our angular momentum theory. These fractions do not arise from the odd denominator rule. Due to spin polarization for both of these along the magnetic field, these states are not the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306392
Autor:
Shrivastava, Keshav N.
In the experiments, the quantity measurd is the product of the charge and the magnetic field from which fractional charge is deduced. There is no objection to measuring the fractional charge as long as it is remembered that the product of the charge
Externí odkaz:
http://arxiv.org/abs/cond-mat/0305556