Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Keshari Nandan"'
Publikováno v:
Frontiers in Electronics, Vol 4 (2023)
Two-dimensional (2-D) semiconductors are emerging as strong contenders for the future of Angstrom technology nodes. Their potential lies in enhanced device scaling and energy-efficient switching compared to traditional bulk semiconductors like Si, Ge
Externí odkaz:
https://doaj.org/article/b4c0f0d229ea42188501796ba544342b
Autor:
Keshari Nandan, Chandan Yadav, Priyank Rastogi, Alejandro Toral-Lopez, Antonio Marin-Sanchez, Enrique G. Marin, Francisco G. Ruiz, Somnath Bhowmick, Yogesh S. Chauhan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1177-1183 (2020)
In this article, we present a channel thickness dependent analytical model for MoS2 symmetric double-gate FETs including negative capacitance (NC) effect. In the model development, first thickness dependent model of the baseline 2D FET is developed,
Externí odkaz:
https://doaj.org/article/c85e6a2aab4648b1a57d87461176033d
Publikováno v:
IEEE Transactions on Electron Devices. 70:2445-2452
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b59b736bbfdae52ef52f31f2a2916b71
https://doi.org/10.1109/ted.2023.3261831
https://doi.org/10.1109/ted.2023.3261831
Publikováno v:
IEEE Transactions on Electron Devices. 70:1580-1588
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5bef6dda42736bf86d070bb189b8652
https://doi.org/10.1109/ted.2023.3247549
https://doi.org/10.1109/ted.2023.3247549
Publikováno v:
Transactions of the Indian National Academy of Engineering. 8:1-14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee459dd92939382b4e9f6175f72d9ee
https://doi.org/10.1007/s41403-022-00379-3
https://doi.org/10.1007/s41403-022-00379-3
Publikováno v:
IEEE Transactions on Electron Devices. 69:406-413
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3a4d9e8af51b12a218359d11bfff294
https://doi.org/10.1109/ted.2021.3130834
https://doi.org/10.1109/ted.2021.3130834
Publikováno v:
IEEE Transactions on Electron Devices. 68:6551-6557
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e24b87b613501fb72ce717042aacf9
https://doi.org/10.1109/ted.2021.3119552
https://doi.org/10.1109/ted.2021.3119552
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a005923fa4f7f0950d9856c44c44abb4
https://doi.org/10.1109/icee56203.2022.10117934
https://doi.org/10.1109/icee56203.2022.10117934
Autor:
Yogesh Singh Chauhan, Keshari Nandan, Priyank Rastogi, Enrique G. Marin, Antonio Marin-Sanchez, Chandan Yadav, Alejandro Toral-Lopez, Francisco G. Ruiz, Somnath Bhowmick
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In this paper, we present a channel thickness dependent analytical model for MoS 2 symmetric double-gate FETs aiming at circuit simulation. To validate the model behavior, density functional theory (DFT) calculations are taken into account to obtain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eec5d5093428ad5eb1aca85f6406b8f
https://doi.org/10.1109/edtm47692.2020.9117875
https://doi.org/10.1109/edtm47692.2020.9117875
Autor:
Francisco G. Ruiz, Keshari Nandan, Alejandro Toral-Lopez, Enrique G. Marin, Chandan Yadav, Yogesh Singh Chauhan, Somnath Bhowmick, Priyank Rastogi, Antonio Marin-Sanchez
Publikováno v:
Digibug: Repositorio Institucional de la Universidad de Granada
Universidad de Granada (UGR)
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1177-1183 (2020)
Digibug. Repositorio Institucional de la Universidad de Granada
instname
Universidad de Granada (UGR)
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1177-1183 (2020)
Digibug. Repositorio Institucional de la Universidad de Granada
instname
—In this paper, we present a channel thickness dependent analytical model for MoS2 symmetric double-gate FETs including negative capacitance (NC) effect. In the model development, first thickness dependent model of the baseline 2D FET is developed,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c0408513492f054ca5d9b5964a4c55b
http://hdl.handle.net/10481/65070
http://hdl.handle.net/10481/65070
