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Publikováno v:
Heterostructure Epitaxy and Devices ISBN: 9789401065931
Heterostructure Epitaxy and Devices
Heterostructure Epitaxy and Devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7dc619b51b81d9468521127aff85c6c
https://doi.org/10.1007/978-94-009-0245-9_2
https://doi.org/10.1007/978-94-009-0245-9_2
Autor:
Ulrich Gernert, Carsten Möller, Kerstin Knorr, Wolfgang Richter, Udo W. Pohl, Herbert Schumann, Jochen Gottfriedsen, Jürgen Bläsing, Jürgen Christen
Publikováno v:
Japanese Journal of Applied Physics. 38:L105
Tertiarybutylhydrazine was used as a novel nitrogen source for metalorganic vapor phase epitaxy of GaN at low temperatures. Hexagonal epilayers with optically smooth and specular surfaces were grown with trimethylgallium on basal plane sapphire as we