Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kerry Joseph Nagel"'
Autor:
Sanjeev Aggarwal, H. K. Lee, Frederick B. Mancoff, Sumio Ikegawa, Kerry Joseph Nagel, Syed M. Alam, M. DeHerrera, Jijun Sun, Dimitri Houssameddine, Brian M. Hughes, G. Shimon
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
In this paper, we review key materials and process technology developments to successfully commercialize 1Gb standalone Spin-Transfer Torque (STT) MRAM. Magnetic tunnel junction (MTJ) stack and process integration were developed to reduce the operati
Autor:
J. J. Sun, M. DeHerrera, G. Shimon, Frederick B. Mancoff, J. Janesky, H. K. Lee, Syed M. Alam, Sanjeev Aggarwal, H. Lu, Brian M. Hughes, Kerry Joseph Nagel, Hamid Almasi, Thomas W. Andre, Sumio Ikegawa
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper, we describe a fully-functional 1 Gb standalone spin-transfer torque magnetoresistive random access memory (STT-MRAM) integrated on 28 nm CMOS and based on perpendicular magnetic tunnel junctions (pMTJ’s). Electrical short flows were
Autor:
Jon M. Slaughter, J. J. Sun, Sarin A. Deshpande, N. L. Chung, M. Hossain, Frederick B. Mancoff, Renu Whig, Sumio Ikegawa, Y. S. You, S. T. Woo, C. C. Wang, J. Wong, Naganivetha Thiyagarajah, T. Ling, J. W. Ting, H.-J. Chia, G. Shimon, J. Janesky, Ming-Wei Lin, Chim Seng Seet, H. Yang, Michael Tran, Syed M. Alam, Vinayak Bharat Naik, H. Lu, Thomas W. Andre, Taiebeh Tahmasebi, C. Hai, T. H. Chan, Dimitri Houssameddine, K. Yamane, Rajesh R. Nair, Danny Pak-Chum Shum, S. Y. Siah, K. W. Wong, M. DeHerrera, R. Chao, Sanjeev Aggarwal, Kerry Joseph Nagel, Kangho Lee
Publikováno v:
2017 Symposium on VLSI Technology.
Perpendicular Spin-Transfer Torque (STT) MRAM is a promising technology in terms of read/write speed, low power consumption and non-volatility, but there has not been a demonstration of high density manufacturability at small geometries. In this pape
Autor:
Yew Tuck Chow, Yi Wanbing, Chin Chuan Neo, Francis Poh, Sarin A. Deshpande, Yi Jiang, Bharat Bhushan, Juan Boon Tan, Kah Wee, Kerry Joseph Nagel, Sanjeev Aggarwal, Moazzem Hossain, Wang Zhehui, Ju Dy, Danny Pak-Chum Shum, Guoqing Lin
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
We present the first exploratory low temperature, lower than standard back-end-of-line (BEOL) interconnects temperature in CMOS. The approach poses several challenges such as undercut in pad via, photo resist residue defects post Aluminum (Al) etch a
Autor:
H.-J. Chia, Frederick B. Mancoff, Seung-Mo Noh, Jijun Sun, G. Shimon, Yew Tuck Chow, Michael Tran, J. Janesky, Syed M. Alam, M. DeHerrera, Jon M. Slaughter, Sarin A. Deshpande, Taiebeh Tahmasebi, Ming-Wei Lin, M. Hossain, Thomas Andre, Francis Poh, C. C. Wang, Renu Whig, Danny Pak-Chum Shum, S. K. Ye, Yi Jiang, Hong-xi Liu, Sumio Ikegawa, Sanjeev Aggarwal, J. H. Lee, Kerry Joseph Nagel
Publikováno v:
2017 IEEE International Magnetics Conference (INTERMAG).
First-generation MRAM, based on a field switching innovation called “Savtchenko switching,” is mass produced by Everspin in densities up to 16Mb.
Autor:
Ming-Wei Lin, M. Hossain, Sumio Ikegawa, Yew Tuck Chow, J. H. Lee, H.-J. Chia, M. DeHerrera, J. Janesky, Renu Whig, C. C. Wang, Kerry Joseph Nagel, Jon M. Slaughter, Francis Poh, Sarin A. Deshpande, Frederick B. Mancoff, Syed M. Alam, Hong-xi Liu, Seung-Mo Noh, Sanjeev Aggarwal, Yi Jiang, S. K. Ye, J. J. Sun, Taiebeh Tahmasebi, Danny Pak-Chum Shum, Thomas Andre, G. Shimon, Michael Tran
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
In this paper we present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb,
Autor:
T. Andre, F. B. Mancoff, Kerry Joseph Nagel, N. D. Rizzo, H.-J. Chia, Jon M. Slaughter, Sarin A. Deshpande, Sanjeev Aggarwal, M. DeHerrera, Jijun Sun, Dimitri Houssameddine, Michael L. Schneider, J. Janesky, Syed M. Alam, Renu Whig
Publikováno v:
IEEE Transactions on Magnetics. 49:4441-4446
A spin torque magnetoresistive random access memory (ST-MRAM) holds great promise to be a fast, high density, nonvolatile memory that can enhance the performance of a variety of applications, particularly when used as a non-volatile buffer in data st
Autor:
Renu Whig, J. Janesky, F. B. Mancoff, C. H. Tan, Syed M. Alam, M. DeHerrera, Michael L. Schneider, H.-J. Chia, Jon M. Slaughter, Sarin A. Deshpande, Jijun Sun, N. D. Rizzo, Dimitri Houssameddine, S. Hellmold, P. LoPresti, Sanjeev Aggarwal, T. Andre, Kerry Joseph Nagel
Publikováno v:
2013 5th IEEE International Memory Workshop.
With the recent sampling of Everspin Technologies spin torque magnetoresistive random access memory (ST-MRAM), the performance gap between the high speed volatile memories of SRAM and DRAM and the non-volatile memories of hard disk drives (HDD), Flas
Autor:
Frederick B. Mancoff, J. Janesky, Syed M. Alam, Thomas W. Andre, Kerry Joseph Nagel, J. J. Sun, Dimitri Houssameddine, P. LoPresti, Nicholas D. Rizzo, Sanjeev Aggarwal, Renu Whig, Jon M. Slaughter, Sarin A. Deshpande
Publikováno v:
2012 International Electron Devices Meeting.
We review key properties for commercial ST-MRAM circuits, discuss the challenges to achieving the many performance and scaling goals that are being addressed in current development around the world, recent results in the field, and present first resu
Autor:
Yongsheng Gui, Ke Wu, Jon M. Slaughter, Dimitri Houssameddine, Simon Hemour, Kerry Joseph Nagel, Can-Ming Hu, Renu Whig, Sanjeev Aggarwal
Publikováno v:
2012 IEEE/MTT-S International Microwave Symposium Digest.
Since nearly the beginning, the Schottky diode rules in the development of RF/microwave mixing and rectifying circuits. However, in the specific μW power harvesting applications, the diodes fail to provide satisfying RF-to-DC conversion efficiency m