Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kerlit Chew"'
Autor:
Rusli, Victor Adedeji, Tojiddin M. Saliev, Kerlit Chew, Chin-Che Tin, B. G. Atabaev, Suwan P. Mendis, I. G. Atabaev, E. N. Bakhranov
Publikováno v:
Thin Solid Films. 518:e118-e120
A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5988b09a1230f6db5b3ebc520327d2d
https://doi.org/10.1016/j.tsf.2010.03.107
https://doi.org/10.1016/j.tsf.2010.03.107
Autor:
Sir Cong Chong, Claude Ahyi, Kim Nie Chong, Meng Suan Liang, Rusli, Kerlit Chew, Chin-Che Tin, Kim Luong Lew
Publikováno v:
MRS Proceedings. 1305
Interface state density profiling of the thermal oxide / n-type 4H-SiC interface which underwent post-oxidation nitric-oxide (NO) annealing showed that an interface state density of approximately 1×1011 cm−2eV−1 could be achieved at around 0.2 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6f2c2c069f33cd312c844c8b55a79ad
https://doi.org/10.1557/opl.2011.306
https://doi.org/10.1557/opl.2011.306
Publikováno v:
2010 IEEE Conference on Sustainable Utilization and Development in Engineering and Technology.
In this paper, we investigate the properties of a submicron p MOS with a single layer of metallization. The fabrication process and electrical characterization of the device were simulated using the SILVACO TCAD tools. We have applied constant field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c7ab470c1840cc28677b0084627e371
https://doi.org/10.1109/student.2010.5686992
https://doi.org/10.1109/student.2010.5686992
Publikováno v:
2010 IEEE Conference on Sustainable Utilization & Development in Engineering & Technology (STUDENT); 2010, p123-126, 4p
Publikováno v:
Journal of Applied Physics. 88:4191
The conduction mechanism of molybdenum-containing (Mo) diamond-like carbon films deposited using electron cyclotron resonance chemical vapor deposition was investigated. It is found that there is a conductivity turning point at around 115 K, above wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5cc59f8777011de71bcbc232b86013a
https://doi.org/10.1063/1.1308102
https://doi.org/10.1063/1.1308102
Autor:
Gan, Bo, Ahn, J., Zhang, Qing, Yoon, S. F., Rusli, Kerlit, Chew, Huang, Q. F., Ligatchev, V. A.
Publikováno v:
Radiation Effects & Defects in Solids; Dec2001, Vol. 156 Issue 1-4, p203-207, 5p
Autor:
Gan, Bo, Kerlit, Chew, Zhang, Qing, Ahn, J., Yoon, S.F., Rusli, Yu, J., Huang, Q.F., Ligatchev, V.A.
Publikováno v:
Physica Status Solidi (A) - Applications and Materials Science; September 2000, Vol. 181 Issue: 1 p17-22, 6p
Publikováno v:
Journal of Applied Physics; 10/1/2000, Vol. 88 Issue 7, p4191, 5p, 6 Graphs
Autor:
Hastas, N A, Dimitriadis, C A, Panayiotatos, Y, Tassis, D H, Logothetidis, S, Papadimitriou, D, Roupakas, G, Adamopoulos, G
Publikováno v:
Semiconductor Science & Technology; 2002, Vol. 17 Issue 7, p662-667, 6p