Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Keren J. Kanarik"'
Autor:
Keren J. Kanarik, Wojciech T. Osowiecki, Yu Lu, Dipongkar Talukder, Niklas Roschewsky, Sae Na Park, Mattan Kamon, David M. Fried, Richard A. Gottscho
Publikováno v:
Nature. 616:707-711
One of the bottlenecks to building semiconductor chips is the increasing cost required to develop chemical plasma processes that form the transistors and memory storage cells1,2. These processes are still developed manually using highly trained engin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::023a7ec1074df53d8fd27c7f3353fad4
https://doi.org/10.1038/s41586-023-05773-7
https://doi.org/10.1038/s41586-023-05773-7
Autor:
Sang-wuk Park, Keizo Kinoshita, Kenji Ishikawa, Silvia Armini, Gottlieb S. Oehrlein, Tatsuru Shirafuji, Keren J. Kanarik, Yasuhiro Morikawa, Richard A. Gottscho, Hisataka Hayashi, Tatsuo Ishijima, Nathan P. Marchack, Gert J. Leusink, Emilie Despiau-Pujo, Takahide Murayama
Publikováno v:
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
Japanese Journal of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
Japanese Journal of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bca17bb5242eaeeee079b4e77984bcef
https://hal.univ-grenoble-alpes.fr/hal-02337524
https://hal.univ-grenoble-alpes.fr/hal-02337524
Publikováno v:
Journal of Vacuum Science & Technology A. 39:037001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5e7718bf457b237329fd714c749e552
https://doi.org/10.1116/6.0001000
https://doi.org/10.1116/6.0001000
Publikováno v:
Journal of Vacuum Science & Technology A. 39:010401
Atomic layer etching (ALE) is a multistep process used for removing ultrathin layers of the material. The removal step can be driven by ion bombardment, typically with energies of 1 s. Previously, we reported a new ALE operating regime where exposure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109095c968b446a2efc54b72228ca1f9
https://doi.org/10.1116/6.0000762
https://doi.org/10.1116/6.0000762
Autor:
Keren J. Kanarik
Publikováno v:
Journal of Vacuum Science & Technology A. 38:031004
Plasma is found almost everywhere in the universe. Yet most people are not conscious of its presence, nor the role it plays in creating the electronic devices in our everyday lives. Virtually every semiconductor chip has been touched by plasma, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8ea5b4f205a1a2a1912c5f008a9aa6b
https://doi.org/10.1116/1.5141863
https://doi.org/10.1116/1.5141863
Autor:
Andreas Fischer, Richard A. Gottscho, Vahid Vahedi, Samantha Tan, Keren J. Kanarik, Thorsten Lill, Skip Berry
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
A conceptual framework is introduced to gain insights into performance benefits and challenges of directional and isotropic Atomic Layer Etching (ALE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b4e2608dd4adf1c9473098a671fb1ae
https://doi.org/10.1109/edtm.2018.8421486
https://doi.org/10.1109/edtm.2018.8421486
Autor:
Pan Yang, Richard A. Gottscho, Thorsten Lill, Keren J. Kanarik, John D. Boniface, Andreas Fischer, Richard Janek, Vahid Vahedi
Publikováno v:
SPIE Proceedings.
In this paper, we report on plasma assisted thermal Atomic Layer Etching (ALE) of Al2O3. The surface was modified via a fluorine containing plasma without bias power. The removal was accomplished by a thermal reaction step using tin-(II) acetylaceton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbd18e63db1cfd543e81633ab5bc65db
https://doi.org/10.1117/12.2258129
https://doi.org/10.1117/12.2258129
Autor:
Thorsten Lill, Richard A. Gottscho, Keren J. Kanarik, Samantha Tan, Jeffrey Marks, Vahid Vahedi, Wenbing Yang
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:N5010-N5012
Following Moore’s Law, feature dimensions will soon reach dimensions on an atomic scale. For the most advanced structures, conventional plasma etch processes are unable to meet the requirement of atomic scale fidelity. The breakthrough that is need
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d93e9f372738cb3360ca44bd90e6bdb
https://doi.org/10.1149/2.0031506jss
https://doi.org/10.1149/2.0031506jss
Autor:
Thorsten Lill, Samantha Tan, Meihua Shen, Eric Hudson, Keren J. Kanarik, Richard A. Gottscho, Pan Yang, Jeffrey Marks, Vahid Vahedi
Publikováno v:
Encyclopedia of Plasma Technology ISBN: 9781482214314
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::024163fe5ce34a804f05817523f50dd2
https://doi.org/10.1081/e-eplt-120053939
https://doi.org/10.1081/e-eplt-120053939
Autor:
Richard A. Gottscho, Vahid Vahedi, Thorsten Lill, Samantha Tan, Keren J. Kanarik, Ivan L. Berry
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:01B105
Plasma assisted atomic layer etching (ALE) has recently been introduced into manufacturing of 10 nm logic devices. This implementation of ALE is called directional ALE because ions transfer momentum to the etching surface during the removal step. Pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db67707e4cac571300f3a5a8e03df481
https://doi.org/10.1116/1.5003393
https://doi.org/10.1116/1.5003393