Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Keon-Hee Lim"'
Autor:
Jonggu Han, Woojin Park, Jongsik Kim, Keon-Hee Lim, Gwang-Ho Lee, Seongjin In, Jitae Park, Se-Jin Oh, Sang Ki Nam, Doug-Yong Sung, Se Youn Moon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59ef05ca0d74ebb49b9f28250552f942
https://doi.org/10.2139/ssrn.4405906
https://doi.org/10.2139/ssrn.4405906
Autor:
Jonggu Han, Woojin Park, Rodolphe Mauchauffé, Keon-Hee Lim, Gwang-Ho Lee, Seongjin In, Jitae Park, Chansoo Kang, Se Youn Moon
Publikováno v:
Measurement Science and Technology. 34:025006
Recently, vacuum ultra-violet (VUV) radiation emitted from plasmas has been of particular interest in semiconductor device fabrication because of the effects of its high-energy photons, such as induced damage or curing on low-k materials. Due to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acd09ef0f59c3a6b30cb2ec815a305a0
https://doi.org/10.1088/1361-6501/ac99f3
https://doi.org/10.1088/1361-6501/ac99f3
Autor:
Keon-Hee Lim, Hyun-Jae Na, Nam-Kwang Cho, Changik Im, Jun Hee Lee, Sung-Eun Lee, Youn Sang Kim, Jintaek Park, Eun Goo Lee
Publikováno v:
ACS Applied Electronic Materials. 1:430-436
The stability and control of copper (Cu) electrode application in oxide semiconductor indium gallium zinc oxide (IGZO) can improve the resistance–capacitance (RC) delay, which is greatly critical f...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fdf01b7f15625f78fa002c7263af04c
https://doi.org/10.1021/acsaelm.8b00132
https://doi.org/10.1021/acsaelm.8b00132
Autor:
Jintaek Park, Jae-Eun Huh, Jun Hee Lee, Sung-Eun Lee, Jin-Won Lee, Youn Sang Kim, Keon-Hee Lim
Publikováno v:
Journal of Industrial and Engineering Chemistry. 68:117-123
Recently, aqueous method has attracted lots of attention because it enables the solution-processed metal oxide thin film with high electrical properties in low temperature fabrication condition to various flexible devices. Focusing the development of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed98492c1e029ef8797d39dea65c405d
https://doi.org/10.1016/j.jiec.2018.07.035
https://doi.org/10.1016/j.jiec.2018.07.035
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
The wide research and development on oxide thin-film transistors (TFTs) have led to considerable changes in mainstream technology in various electronic applications. Up to now, much research has been focusing on enhancing the performance of oxide TFT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::707d2986619bffc284721fa4b2c5ebcd
http://link.springer.com/article/10.1038/s41598-018-32233-4
http://link.springer.com/article/10.1038/s41598-018-32233-4
Autor:
Nam-Kwang Cho, Junwoo Park, Keon-Hee Lim, Kapsoo Yoon, Jin-Won Lee, Donggun Lee, Youn Sang Kim
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Scientific Reports
Scientific Reports
The technology for electrical current passing through an insulator thin-film between two electrodes is newly getting spotlights for substantial potentials toward advanced functional devices including a diode and a resistive switching device. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a8ed65db226e54d323c5121bb3880ad
http://link.springer.com/article/10.1038/s41598-018-23990-3
http://link.springer.com/article/10.1038/s41598-018-23990-3
Autor:
Keon-Hee Lim, Jae-Eun Huh, Sung-Eun Lee, Youn Sang Kim, Jun-Hee Lee, Jintaek Park, Jin-Won Lee
Publikováno v:
Journal of Materials Chemistry C. 5:7768-7776
Solution-processed oxide semiconductor thin-film transistors (OS TFTs) have attracted much attention as a future display technology, because they have intrinsic properties such as flexibility and transparency as well as fabrication process advantages
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a136cea42e7df6088342307d18c24a9
https://doi.org/10.1039/c7tc01779k
https://doi.org/10.1039/c7tc01779k
Autor:
Changik Im, Keon-Hee Lim, Jintaek Park, Eun Goo Lee, Sung-Eun Lee, Youn Sang Kim, Jin-Won Lee, Jun Hee Lee
Publikováno v:
ACS applied materialsinterfaces. 11(4)
Growing attention has been given to low temperature, solution-processed metal oxide thin-film transistors because they can be applied in the emerging sector of flexible and large-scale electronics. However, major obstacles of solution-grown devices,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4929ef667db5492d59caa7c43fcd5e17
https://pubmed.ncbi.nlm.nih.gov/30607933
https://pubmed.ncbi.nlm.nih.gov/30607933
Autor:
Junwoo Park, Jae Eun Huh, Eungkyu Lee, Youn Sang Kim, Nam-Kwang Cho, Keon-Hee Lim, Bu Il Nam, Jin-Won Lee
Publikováno v:
ACS Applied Materials & Interfaces. 9:548-557
Oxide semiconductors thin film transistors (OS TFTs) with good transparency and electrical performance have great potential for future display technology. In particular, solution-processed OS TFTs have been attracted much attention due to many advant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3845b1e11835f55a00922e8d8bc0d9a
https://doi.org/10.1021/acsami.6b11867
https://doi.org/10.1021/acsami.6b11867
Autor:
Won Hyung Lee, Sung-Eun Lee, Jae-Eun Huh, Jun Hee Lee, Youn Sang Kim, Jintaek Park, Keon-Hee Lim
Publikováno v:
ACS applied materialsinterfaces. 10(36)
Solution-processed oxide semiconductors (OSs) have attracted much attention because they can simply, quickly, and cheaply produce transparent channels on flexible substrates. However, despite such advantages, in the fabrication process of OS thin-fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fddafb831ada56f2261b8ce0d1cc5e0a
https://pubmed.ncbi.nlm.nih.gov/30118199
https://pubmed.ncbi.nlm.nih.gov/30118199