Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Keon Hwa Lee"'
Autor:
Yong Gyeong Lee, Sara Pouladi, Nam‐In Kim, Mina Moradnia, Jaekyun Kim, Keon Hwa Lee, Jae‐Hyun Ryou
Publikováno v:
Electronics Letters, Vol 60, Iss 9, Pp n/a-n/a (2024)
Abstract The authors demonstrate a large‐area vertical‐cavity surface‐emitting laser (VCSEL) 25 × 35 array on a p‐type GaAs substrate with an emission wavelength of ∼940 nm and optical output power > 1 W, using an inverted junction (n‐up
Externí odkaz:
https://doaj.org/article/5bd87d247b5c404abe12fc39a6b46a4d
Autor:
Yao Yao, Shahab Shervin, Venkat Selvamanickam, Sara Pouladi, Ying Gao, Seung Kyu Oh, Jae-Hyun Ryou, Keon-Hwa Lee, Pavel Dutta, Mojtaba Asadirad, Devendra Khatiwada, Sicong Sun, Yongkuan Li, Monika Rathi
Publikováno v:
Progress in Photovoltaics: Research and Applications. 27:30-36
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8df3816ef0f92735d503dee4b10a94
https://doi.org/10.1002/pip.3070
https://doi.org/10.1002/pip.3070
Autor:
Venkat Selvamanickam, Mojtaba Asadirad, Pavel Dutta, Ying Gao, Seung Kyu Oh, Jeomoh Kim, Sara Pouladi, Shahab Shervin, Keon Hwa Lee, Jae-Hyun Ryou, Sung-Nam Lee
Publikováno v:
IEEE Electron Device Letters. 38:217-220
We theoretically study the change of the performance characteristics with various mechanical bending conditions for flexible thin-film transistors (TFTs) by two-dimensional device simulation. The characteristics of newly developed flexible TFTs with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c33b16182a00ed0038f54a42c4c49a1
https://doi.org/10.1109/led.2016.2645451
https://doi.org/10.1109/led.2016.2645451
Autor:
Sang Hoon Han, Tae Hun Chung, Keon Hwa Lee, Jun-Seok Ha, Hokyun Rho, Tak Jeong, Jun-Beom Park, Moon Kyu Kwak
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
Scientific Reports
Scientific Reports
GaN-based microscale light-emitting diodes (μLEDs) are reported for assembly into deformable displays and repair systems. A stamp-imprinting method that enables large area assembly without spatial limitation is involved in the system, and a selectiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7cff27c36762affca49ecd2fc71ed5e
https://doi.org/10.1038/s41598-019-47449-1
https://doi.org/10.1038/s41598-019-47449-1
Autor:
Keon-Hwa Lee, Sicong Sun, Eduard Galstyan, Sara Pouladi, Ying Gao, Mojtaba Asadirad, Venkat Selvamanickam, Yongkuan Li, Shahab Shervin, Yao Yao, Jae-Hyun Ryou, Monika Rathi, Pavel Dutta
Publikováno v:
ACS Applied Materials & Interfaces. 8:29565-29572
Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintention
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9367ad32be997307a6a79a142dd6ac05
https://doi.org/10.1021/acsami.6b06770
https://doi.org/10.1021/acsami.6b06770
Autor:
Mojtaba Asadirad, June-o Song, Jeong Tak Oh, Shahab Shervin, Keon Hwa Lee, Seung Kyu Oh, Jae-Hyun Ryou, Yong-Tae Moon
Publikováno v:
IEEE Photonics Technology Letters. 28:1956-1959
Demonstrated are visible GaN-based light-emitting diodes (LEDs) on economical large-area Si substrates using an advanced device and packaging architecture to improve optical output power, while reducing manufacturing costs. The process employs thin-f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa278b6330a92eeacc21d8e851f217e3
https://doi.org/10.1109/lpt.2016.2580039
https://doi.org/10.1109/lpt.2016.2580039
Autor:
Sung-Nam Lee, Seung-Hwan Kim, Hyun Jung Park, Jae-Hyun Ryou, Shahab Shervin, Keon Hwa Lee, Joon Seop Kwak, Mojtaba Asadirad
Publikováno v:
physica status solidi (a). 213:2769-2772
Patterned gallium oxide (Ga2O3) using one-step patterning followed by oxygen plasma treatment on a p-GaN layer can function as both current-blocking and optical-scattering regions for uniform current spreading and improved light-extraction efficienci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c00ec5213b9c93dc17d39e84da56e8
https://doi.org/10.1002/pssa.201600240
https://doi.org/10.1002/pssa.201600240
Publikováno v:
IEEE Photonics Technology Letters. 27:149-152
This letter examined the use of a patterned ion-damaged current blocking layer (patterned-IDCBL). A 50-A-InGaN layer grown as the top epitaxial layer was transformed into an insulator fabricated by oxygen plasma treatment, in which the dot patterns a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b3added4887a95806a2835d4c0ffc7
https://doi.org/10.1109/lpt.2014.2362982
https://doi.org/10.1109/lpt.2014.2362982
Autor:
Kathy Olenick, Shahab Shervin, Keon Hwa Lee, Dong Kyu Lee, Jae-Hyun Ryou, Joon Seop Kwak, John A. Olenick, Shivkant Singh, Venkat Venkateswaran, Anastassios Mavrokefalos, Seung Kyu Oh, Sung-Nam Lee, Seung-Hwan Kim, Mojtaba Asadirad
Publikováno v:
IEEE Electron Device Letters. 37:615-617
We demonstrate flip-chip light-emitting diodes (FC-LEDs) on a flexible yttria-stabilized zirconia (YSZ) substrate and compare them with FC-LEDs on a polymeric substrate. Degradation of luminescence intensity and red-shift of peak wavelength are not o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::874841670a569091f665fcb2dc41bb6b
https://doi.org/10.1109/led.2016.2547877
https://doi.org/10.1109/led.2016.2547877
Autor:
Sara Pouladi, Monika Rathi, Devendra Khatiwada, Mojtaba Asadirad, Seung Kyu Oh, Pavel Dutta, Yao Yao, Ying Gao, Sicong Sun, Yongkuan Li, Shahab Shervin, Keon-Hwa Lee, Venkat Selvamanickam, Jae-Hyun Ryou
Publikováno v:
Progress in Photovoltaics: Research and Applications. 27:i-i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2b47b0ba6c4de6d4aa2ebaecd29f72b
https://doi.org/10.1002/pip.3108
https://doi.org/10.1002/pip.3108