Zobrazeno 1 - 10
of 247
pro vyhledávání: '"Kenzo Fujiwara"'
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 44:1278-1281
The relative internal quantum efficiency in green (In,Ga)N quantum well diodes is investigated by ac photoluminescence (PL) experiments using a lock-in technique under direct photoexcitation conditions where photoexcited carriers are generated only i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88c0c79f0aae5dd2077ae8fa8e2fb256
https://doi.org/10.1016/j.physe.2012.02.001
https://doi.org/10.1016/j.physe.2012.02.001
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:2665-2668
Thermal escape process of carriers has been investigated by steady-state and time-resolved photoluminescence (PL) spectroscopy in GaAs single-quantum-well (SQW) contained in GaAs/AlAs short-period superlattices (SPSs) over a wide temperature (T) rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c9bf67f80670508266d8b6f4d1ec76
https://doi.org/10.1016/j.physe.2010.02.009
https://doi.org/10.1016/j.physe.2010.02.009
Publikováno v:
physica status solidi c. 6:201-204
Excitonic radiative recombination in different GaAs quantum wells (QWs) is investigated by cross-sectional cathodoluminescence (CL) spectroscopy with high spatial resolution. By measuring spectrally discriminated CL intensities originating from the v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bb72d3400b7a681754e8cfad738ad09
https://doi.org/10.1002/pssc.200879819
https://doi.org/10.1002/pssc.200879819
Publikováno v:
physica status solidi (b). 244:2926-2935
Dynamics of vertical transport in all-binary GaAs/AlAs short-period superlattices (SPSs) have been investigated as a function of temperature by steady-state and time-resolved photoluminescence (PL) experiments. When two different, enlarged quantum we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7fa715300f3e67eb701a255e68d53434
https://doi.org/10.1002/pssb.200675617
https://doi.org/10.1002/pssb.200675617
Publikováno v:
physica status solidi (c). 4(7):2768-2771
The electroluminescence (EL) spectral intensity has been investigated in the high-brightness green InGaN multiple-quantum-well light emitting diode (LED) in comparison with the single-quantum-well LED over a wide temperature range and as a function o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb1fc713897fcb0ff37af93652c89c70
https://kyutech.repo.nii.ac.jp/records/151
https://kyutech.repo.nii.ac.jp/records/151
Publikováno v:
Journal of Crystal Growth. :902-905
Ultra-low-frequency photocurrent (PC) self-oscillation has been investigated in an In 0.15 Ga 0.85 As/Al 0.15 Ga 0.85 As quantum-well (QW) diode in details as a function of temperature, excitation power and wavelength. The PC oscillation frequency in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a65daff47abb6e1debb7519c3aaac50
https://doi.org/10.1016/j.jcrysgro.2006.11.160
https://doi.org/10.1016/j.jcrysgro.2006.11.160
Publikováno v:
Thin Solid Films. 515:4480-4483
Electroluminescence (EL) spectral intensity in the high-brightness blue and green InGaN single-quantum-well (SQW) diodes has been comparatively studied over a wide temperature range and as a function of injection current. When the necessary forward b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::426aa45662c9f5328561b34506af6bc2
https://doi.org/10.1016/j.tsf.2006.07.135
https://doi.org/10.1016/j.tsf.2006.07.135
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 33:196-200
Anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded In x (Al 0.17 Ga 0.83 ) 1− x As/Al 0.17 Ga 0.83 As quantum well (QW) system consisting of five QWs with different x values. When a low-energy heavy-hole (1 s) exciton stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfcb5e390ce099c4221379a07d7b70da
https://doi.org/10.1016/j.physe.2006.02.001
https://doi.org/10.1016/j.physe.2006.02.001
Publikováno v:
Physica status solidi. C, Current topics in solid state physics. 3(6):2203-2206
Carrier capture and escape processes in the super-bright green (In,Ga)N single-quantum-well (SQW) light-emitting diode (LED) has been studied by photoluminescence (PL) spectroscopy under reverse and forward bias conditions. The PL spectra were measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5259a95df7af4dc46ab01cc453d4b0e
https://kyutech.repo.nii.ac.jp/records/147
https://kyutech.repo.nii.ac.jp/records/147
Publikováno v:
physica status solidi c. 3:589-593
Electroluminescence (EL) and photoluminescence (PL) properties have been investigated of the high-brightness green InGaN single quantum well (SQW) diode over a wide temperature range (T = 15–300 K) and as a function of injection current level. When
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfbbee63996cd7c18c2244131abe51ac
https://doi.org/10.1002/pssc.200564117
https://doi.org/10.1002/pssc.200564117