Zobrazeno 1 - 10 of 17 pro vyhledávání: '"Kenya Yamashita"'
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Akademický článek
Establishment of an unfed strain of Paramecium bursaria and analysis of associated bacterial communities controlling its proliferation
Autor: Eiko Himi, Tohru Miyoshi-Akiyama, Yuri Matsushima, Iru Shiono, Seiji Aragane, Yui Hirano, Gaku Ikeda, Yuki Kitaura, Kyohei Kobayashi, Daichi Konno, Ayata Morohashi, Yui Noguchi, Yuka Ominato, Soma Shinbo, Naruya Suzuki, Kurama Takatsuka, Hitomi Tashiro, Yoki Yamada, Kenya Yamashita, Natsumi Yoshino, Masaharu Kitashima, Susumu Kotani, Kazuhito Inoue, Akiya Hino, Hiroshi Hosoya
Publikováno v: Frontiers in Microbiology, Vol 14 (2023)
The ciliate Paramecium bursaria harbors several hundred symbiotic algae in its cell and is widely used as an experimental model for studying symbiosis between eukaryotic cells. Currently, various types of bacteria and eukaryotic microorganisms are us
Externí odkaz: https://doaj.org/article/38e584c738f948b3b4456f59fe14c8c0
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2
On the extraordinary low quench sensitivity of an AlZnMg alloy
Autor: Hideo Yoshida, Christian Rowolt, Benjamin Milkereit, Armin Springer, Kenya Yamashita, Kevin Oldenburg, Olaf Kessler, Mami Mihara-Narita
Publikováno v: Journal of Materials Science. 56:20181-20196
The scope of this work was to investigate the quench sensitivity of a high-purity wrought aluminum alloy Al6Zn0.75 Mg (in this work called 7003pure). This is compared to a similar alloy with the additions of Fe, Si, and Zr at a sum less than 0.3 at.%
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::662aea9967b2400a188122deabdd9a6c
https://doi.org/10.1007/s10853-021-06583-w
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3
Normally-Off 4H-SiC Power MOSFET with Submicron Gate
Autor: Kazuya Utsunomiya, Koichi Hashimoto, Masashi Hayashi, Shin Hashimoto, Chiaki Kudo, Makoto Kitabatake, Masao Uchida, Kunimasa Takahashi, Kenya Yamashita, Kyoko Egashira, Osamu Kusumoto
Publikováno v: Materials Science Forum. :1115-1118
In order for SiC-MOSFET to be practical in various power electronics applications, low specific on-resistance Ron,sp, high breakdown voltage and “normally-off” characteristics have to be fulfilled even at high temperature. We fabricated a SiC-MOS
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8999f14b470b02a61132ea3a6baf5c8c
https://doi.org/10.4028/www.scientific.net/msf.600-603.1115
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4
Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter
Autor: Osamu Nara-shi Kusumoto, Masao Matsushita Electric Ind. Co. Ltd. Uchida, Kazuya Utsunomiya, Koichi Hashimoto, Kenya Yamashita, Masashi Hayashi, Shun Kazama, Kunimasa Takahashi, Shin Hashimoto, C. Kudo, Makoto Kitabatake, R. Ikegami, Masaki Tagome
Publikováno v: Materials Science Forum. :913-918
Large (3.6 x 3.6 mm2) chips of the SiC DACFET were fabricated and mounted in TO220 packages. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1400V. The SiC DACFET keeps the normally-off characteristics e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::465c0be2a87cf78d871d035de1890d92
https://doi.org/10.4028/www.scientific.net/msf.600-603.913
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