Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Kenton D. Childs"'
Publikováno v:
Solid State Communications. 150:231-234
We report the density and magnetic field dependence of the valley splitting of two-dimensional electrons in (100) Si metal–oxide–semiconductor field-effect transistors, as determined via activation measurements in the quantum Hall regime. We find
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334b0304fe7ce8d93cb6e00b682afdd3
https://doi.org/10.1016/j.ssc.2009.11.015
https://doi.org/10.1016/j.ssc.2009.11.015
Autor:
Matthew Glenn Blain, Kenton D. Childs, David R. Wheeler, Stephen W. Howell, Robert J Simonson, James M. Tour, Harry Pang, Shawn M. Dirk
Publikováno v:
Nanotechnology. 16:754-758
Optical lithography based on microfabrication techniques was employed to fabricate one-dimensional nanogaps with micrometre edge lengths in silicon. These one-dimensional nanogaps served as a platform on which organic/nanoparticle films were assemble
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bb34cca444ee70b0ccdd59db1aa40bd
https://doi.org/10.1088/0957-4484/16/6/022
https://doi.org/10.1088/0957-4484/16/6/022
Autor:
Kenton D. Childs, David H. Narumand
Publikováno v:
Applied Spectroscopy Reviews. 34:139-158
Auger Electron Spectroscopy (AES) is a fast, “non-destructive” analytical technique used to determine the elemental composition of the top few atomic layers of a surface or exposed interface in a s...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a9d71b56779a043f7d279bf3a1064cf
https://doi.org/10.1081/asr-100100842
https://doi.org/10.1081/asr-100100842
Autor:
Sherry Zmuda, Stephen W. Howell, Kenton D. Childs, David R. Wheeler, Shawn M. Dirk, Matthew Glenn Blain, Robert J Simonson
Publikováno v:
Nanotechnology. 16:1983-1985
This article details a simple four-step procedure to create a one-dimensional nanogap on a buried oxide substrate that relies on conventional photolithography performed on a stack of silicon/silicon oxide/silicon, metal evaporation, and hydrofluoric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::529dc95736f2b66c74881ae0fefe3ec0
https://doi.org/10.1088/0957-4484/16/10/001
https://doi.org/10.1088/0957-4484/16/10/001
Autor:
Robert K. Grubbs, G. A. Ten Eyck, Kevin H. Eng, C. Borras Pinilla, Michael Lilly, Kenton D. Childs, Ralph W. Young, H. L. Stalford, Jeffrey R. Stevens, Lisa A Tracy, Mark A. Eriksson, Joel R. Wendt, E. P. Nordberg, Malcolm S. Carroll
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6654ef6a001eca1c01664923c2a9e57d
Autor:
Jeffery Stevens, Mark A. Eriksson, Kenton D. Childs, Joel R. Wendt, K. Eng, H. L. Stalford, Ralph W. Young, Michael Lilly, G. A. Ten Eyck, Robert K. Grubbs, Richard P. Muller, Lisa A Tracy, Malcolm S. Carroll, E. P. Nordberg
Publikováno v:
Physical Review B. 80
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb-blockade behavior showing single-period conductance osci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d3f7fd051950d6e828b78d494f3ed1
https://doi.org/10.1103/physrevb.80.115331
https://doi.org/10.1103/physrevb.80.115331
Autor:
Malcolm S. Carroll, K. Eng, Kenton D. Childs, Lisa A Tracy, S. Das Sarma, Michael Lilly, G. A. Ten Eyck, E. P. Nordberg, E. H. Hwang
Publikováno v:
Physical Review B. 79
By analyzing the temperature $(T)$ and density $(n)$ dependence of the measured conductivity $(\ensuremath{\sigma})$ of two-dimensional (2D) electrons in the low-density $(\ensuremath{\sim}{10}^{11}\text{ }{\text{cm}}^{\ensuremath{-}2})$ and temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e601211fa5e27885706e88fad4f6ddc
https://doi.org/10.1103/physrevb.79.235307
https://doi.org/10.1103/physrevb.79.235307
Autor:
Malcolm S. Carroll, Jeffery Stevens, Ralph W. Young, Mark A. Eriksson, Kevin H. Eng, H. L. Stalford, G. A. Ten Eyck, E. P. Nordberg, Robert K. Grubbs, Joel R. Wendt, Michael Lilly, Kenton D. Childs, Lisa A Tracy
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18456f2414ceebbda465910ec1f4ad82
Autor:
Malcolm S. Carroll, Joel R. Wendt, Lisa A Tracy, E. P. Nordberg, G. A. Ten Eyck, Michael Lilly, K. Eng, Jeffrey R. Stevens, Kenton D. Childs
Publikováno v:
2008 8th IEEE Conference on Nanotechnology.
We describe the development of a novel silicon quantum bit (qubit) device architecture that involves using materials that are compatible with a Sandia National Laboratories (SNL) 0.35 mum complementary metal oxide semiconductor (CMOS) process intende
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b22522390bff9e6804f7d952da214045
https://doi.org/10.1109/nano.2008.149
https://doi.org/10.1109/nano.2008.149
Autor:
Kevin F. Saiz, Darwin K. Serkland, Kenton D. Childs, Malcolm S. Carroll, Robert L. Jarecki, Todd Bauer
Publikováno v:
MRS Proceedings. 989
A desire to monolithically integrate near infrared (NIR) detectors with silicon complementary metal oxide semiconductor (CMOS) technology has motivated many investigations of single crystal germanium on silicon (Ge/Si) diodes [1-3]. Reduction of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37ed318a084f8b90306fb10bf080868d
https://doi.org/10.1557/proc-0989-a12-05
https://doi.org/10.1557/proc-0989-a12-05