Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kento Tahara"'
Autor:
Kasidit Toprasertpong, Kento Tahara, Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito, Mitsuru Takenaka, Shinichi Takagi
Publikováno v:
ACS Applied Materials & Interfaces. 14:51137-51148
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3862ebb088e71371a4a118a4a0cba2e6
https://doi.org/10.1021/acsami.2c15369
https://doi.org/10.1021/acsami.2c15369
Autor:
Kasidit, Toprasertpong, Kento, Tahara, Yukinobu, Hikosaka, Ko, Nakamura, Hitoshi, Saito, Mitsuru, Takenaka, Shinichi, Takagi
Publikováno v:
ACS applied materialsinterfaces. 14(45)
The comparatively high coercive field in Hf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::192d80f58e7e71711e2531bb21d725dd
https://pubmed.ncbi.nlm.nih.gov/36319949
https://pubmed.ncbi.nlm.nih.gov/36319949
Autor:
Zaoyang Lin, Mitsuru Takenaka, Kasidit Toprasertpong, K. Watanabe, Shinichi Takagi, Kento Tahara, Taichiro Fukui
Publikováno v:
IEEE Electron Device Letters. 41:1588-1591
Crystallization annealing is a key process for the formation of the ferroelectric phase in HfO2-based ferroelectric thin films. In this study, we systematically investigate the notable tradeoff of the annealing process, with temperature varied from 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f870731be2759b0b021e845876bc5671
https://doi.org/10.1109/led.2020.3019265
https://doi.org/10.1109/led.2020.3019265
Critical Impact of Ferroelectric-Phase Formation Annealing on MFIS Interface of HfO2-Based Si FeFETs
Autor:
Kasidit Toprasertpong, Kento Tahara, Taichiro Fukui, Zaoyang Lin, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c82d7b0660bbcdcdf278ec393a47726
https://doi.org/10.7567/ssdm.2020.a-1-02
https://doi.org/10.7567/ssdm.2020.a-1-02
In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and inversion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1bc61fe94c6d26ba4d54f049734bf21
http://arxiv.org/abs/2006.00315
http://arxiv.org/abs/2006.00315
