Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Kentaro Shibahara"'
Autor:
Y. Nishida, Yasuo Inoue, Takeshi Okagaki, J. Yugami, Hidekazu Oda, Tomohiro Yamashita, Y. Miyagawa, Kentaro Shibahara
Publikováno v:
Japanese Journal of Applied Physics. 47:2569-2574
New materials often force modification in a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process and a device structure. In our investigation, a high-stress silicon nitride (SiN) contact etch stopper layer (CESL), which
Autor:
Kentaro Shibahara, Seiichi Miyazaki, Kosuke Sano, Katsunori Makihara, Akio Ohta, Hirotaka Kaku, Takuji Hosoi
Publikováno v:
Surface and Interface Analysis. 40:1126-1130
X-ray photoelectron spectroscopy (XPS) analysis of Sb-predoped fully silicided (FUSI) NiSi gate metal-oxide-semiconductor structure was carried out to evaluate the chemical bonding states and location of Sb pileup at NiSi/SiO2 interface. The results
Publikováno v:
Japanese Journal of Applied Physics. 46:1929-1933
The formation kinetics of Pd2Si for fully silicided (FUSI) gate formation and the work function tuning of a Pd2Si FUSI gate by impurity predoping were investigated. It has been found that the morphology and phase of a formed FUSI layer depend not onl
Publikováno v:
IEEE Transactions on Electron Devices. 53(5):1059-1064
In this paper, the potential for sub-10-nm junction formation of partial-melt laser annealing (PMLA), which is a combination of solid-phase regrowth and heat-assisted laser annealing (HALA), is demonstrated. HALA and PMLA are effective for reducing l
Merits and demerits of light absorbers for ultra-shallow junction formation by green laser annealing
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:136-141
Ultra-shallow junction formation using an all-solid-state green laser (532 nm) has been investigated. Considering too large penetration depth of the green laser into Si, a light absorber layer was formed on a Si substrate. TiN or Mo was deposited on
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1018-1021
Plasma-based ion implantation (PBII) is applied as a sterilization technique for three-dimensional work pieces. In the sterilization process, a pulsed negative high voltage (5μs pulse width, 300pulses∕s,−800V to −13kV) is applied to the electr
Publikováno v:
The Review of Laser Engineering. 33:457-461
Autor:
Shin Yokoyama, Hideo Sunami, Quazi D. M. Khosru, Kentaro Shibahara, Takamaro Kikkawa, Takenobu Yoshino, Anri Nakajima
Publikováno v:
Japanese Journal of Applied Physics. 42:L1429-L1432
The influence of organic contaminants on process-induced interface trap generation and oxide reliability has been investigated using n-type metal oxide semiconductor field-effect transistors (MOSFETs) and capacitors. It has been observed that adsorpt
Autor:
Shin Yokoyama, Hirokazu Aoyama, M. Hirose, Mitsushi Itano, Shingo Nakamura, Kentaro Shibahara
Publikováno v:
Japanese Journal of Applied Physics. 42:5759-5764
Saturated perfluorocarbons (PFCs) such as CF4, C2F6, C3F8 and c-C4F8 are used as dry-etch gases in the semiconductor industry. They have a significant greenhouse effect. Unsaturated fluorocarbons can be alternated with these PFCs because of their eas
Publikováno v:
Japanese Journal of Applied Physics. 42:2654-2659
In this paper, we present phosphorous-assisted low-energy arsenic implantation technology for forming n+ source/drain regions. Low-energy arsenic implantation suppresses transient enhanced diffusion of boron, and this relieves the reverse short-chann