Effect of internal residual stress on the dielectric properties and microstructure of sputter-deposited polycrystalline (Ba,Sr)TiO3 thin films.

Autor: Kentaro Morito, Toshimasa Suzuki

Publikováno v: Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p104107-1-104107-5, 5p, 3 Black and White Photographs, 1 Diagram, 1 Chart, 4 Graphs

Influence of Hydrogen Atoms on Electrical Properties of BST Thin Film Capacitors

Autor: Naoki Ohashi, Hajime Haneda, Kentaro Morito, Isao Sakaguchi, Youichi Mizuno, T. Suzuki

Publikováno v: Key Engineering Materials. 388:167-170

The relationship between the distribution of hydrogen and the electrical properties of (Ba, Sr)TiO3 (BST) thin film capacitors was investigated using secondary ion mass spectroscopy (SIMS) analyses. It has been clearly shown that there is a close rel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc1c45545cc958ddeb18f1cb5f01d3c1
https://doi.org/10.4028/www.scientific.net/kem.388.167

Effects of Hydrogen on Electronic Structure of BaTiO3

Autor: Kentaro Morito, Hiroshi Kishi, T. Suzuki, Yoshiki Iwazaki, S. Tsuneyuki

Publikováno v: Ferroelectrics. 355:108-112

First-principles calculations are performed to explain the recent experimental report showing the existence of electrically inactive hydrogen atoms in (Ba,Sr)TiO3 thin films. The hydrogen atom at the oxygen-vacancy site in the perovskite lattice is s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ff95aee6a88a50f335a0a8ab267cfa9b
https://doi.org/10.1080/00150190701517291

THE LATEST ADVANCES IN HIGH-DIELECTRIC THIN-FILM CAPACITOR TECHNOLOGY FOR GHz-RF DEVICES

Autor: Kentaro Morito, Yoshiki Iwazaki, Toshimasa Suzuki

Publikováno v: Integrated Ferroelectrics. 76:47-57

We present parallel-plate (Ba,Sr)TiO3 and SrTiO3 thin-film capacitor technology on silicon for RF devices. The in-plane thermal stress that is critical to low expansive Si substrates can be controlled by tuning the sputtering deposition pressure, and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f2cd9dc02e6ec0f57f2b8093a104e55
https://doi.org/10.1080/10584580500413525

Hysteresis Behavior of Capacitance–Voltage Curve in (Ba0.6Sr0.4)TiO3Thick Films Caused by Strained Heterostructure

Autor: Yuji Fukuda, Kentaro Morito, Takeshi Kawae, Akiharu Morimoto, Kenshiro Munetomo

Publikováno v: Japanese Journal of Applied Physics. 48:09KA12

(Ba0.6Sr0.4)TiO3 (BST) films with 300–1700 nm thicknesses were deposited on SrTiO3 (STO), 0.5 wt % Nb-doped STO and (La0.5Sr0.5)CoO3-coated STO substrates by pulsed laser deposition. X-ray diffraction analysis results indicate that the deposited BS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c220bd62a708a1ef442850dc69b3b12
https://doi.org/10.1143/jjap.48.09ka12