Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kenta Shimpo"'
Autor:
Rostislav Velichko, Mamoru Furuta, Daiki Tanaka, Yuki Tsuruma, Toshihiro Matsumura, Daichi Sasaki, Taiki Kataoka, Yusaku Magari, Emi Kawashima, Kenta Shimpo
Publikováno v:
SID Symposium Digest of Technical Papers. 52:69-72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ca60bdd2d24118b3e1f7e3391c1664e
https://doi.org/10.1002/sdtp.14612
https://doi.org/10.1002/sdtp.14612
Autor:
Yusaku Magari, Daichi Koretomo, Kenta Shimpo, Mamoru Furuta, S. G. Mehadi Aman, Kentaro Masuda, Hisao Makino, Mutsumi Kimura
Publikováno v:
ACS Applied Materials & Interfaces. 12:47739-47746
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O2 + H2 sputtering....
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a069ddad07c856b26eb650d4379d5f02
https://doi.org/10.1021/acsami.0c12638
https://doi.org/10.1021/acsami.0c12638
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a0ed97e46d4e72aee83bbf13d8f15c0
https://doi.org/10.7567/ssdm.2019.g-5-02
https://doi.org/10.7567/ssdm.2019.g-5-02
Autor:
Daichi Koretomo, Kenta Shimpo, S. G. Mehadi Aman, Yusaku Magari, Mamoru Furura, Kentaro Masuda
Publikováno v:
Japanese Journal of Applied Physics. 59:SGGJ04
We developed low-temperature (150 °C) processed top-gate and coplanar metal-semiconductor field-effect transistors (MES-FETs) with a stacked In–Ga–Zn–O (IGZO) channel consisting of a hydrogenated IGZO (IGZO:H) on conventional IGZO (IGZO). The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1d7a05b05768e8a4ae8977d2c230587
https://doi.org/10.7567/1347-4065/ab65af
https://doi.org/10.7567/1347-4065/ab65af
Autor:
Kenta Shimpo, Daichi Koretomo, Hisao Makino, Yusaku Magari, S. G. Mehadi Aman, Mamoru Furuta, Yuya Hirota
Publikováno v:
Applied Physics Express. 11:081101
In–Ga–Zn–O (IGZO) sputtering in an Ar, O2, and H2 atmosphere followed by annealing represents an effective method for defect reduction of the resulting films. The carrier density of Ar+O2+H2-sputtered IGZO films increases with increasing H2 amo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::533d3ed1f5bcc17d6db30ee22a50aa26
https://doi.org/10.7567/apex.11.081101
https://doi.org/10.7567/apex.11.081101
Publikováno v:
Japanese Journal of Applied Physics; Apr2020, Vol. 59 Issue SG, p1-1, 1p
Autor:
S. G. Mehadi Aman, Yusaku Magari, Kenta Shimpo, Yuya Hirota, Hisao Makino, Daichi Koretomo, Mamoru Furuta
Publikováno v:
Applied Physics Express; Aug2018, Vol. 11 Issue 8, p1-1, 1p