Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Kenta Murayama"'
Autor:
Shunta Harada, Kenta Murayama
Publikováno v:
Journal of Applied Crystallography. 55:1029-1032
For the nondestructive characterization of SiC wafers for power device application, birefringence imaging is one of the promising methods. In the present study, it is demonstrated that birefringence image contrast variation in off-axis SiC wafers cor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::054885668c7917f431eb815f7b69cd14
https://doi.org/10.1107/s1600576722006483
https://doi.org/10.1107/s1600576722006483
Publikováno v:
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520edf83f3b02aa711306061046f39c8
https://doi.org/10.1109/imfedk56875.2022.9975432
https://doi.org/10.1109/imfedk56875.2022.9975432
Autor:
Shunta Harada, Kentaro Kutsukake, Goki Hatasa, Yosuke Tsunooka, Kenta Murayama, Toru Ujihara, Akio Ishiguro, Miho Tagawa, Taka Narumi
Publikováno v:
Vacuum and Surface Science. 62:136-140
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::869186cf4f3145b28ac06cee15d12297
https://doi.org/10.1380/vss.62.136
https://doi.org/10.1380/vss.62.136
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a78b744cbb5fe9e599cbf96227e0574
https://doi.org/10.7567/ssdm.2020.d-4-05
https://doi.org/10.7567/ssdm.2020.d-4-05
Autor:
Toru Ujihara, Xin Bo Liu, Ryota Murai, Kenta Murayama, Kenji Hanada, Can Zhu, Miho Tagawa, Fumihiro Fujie, Shunta Harada
Publikováno v:
Materials Science Forum. 924:60-63
We achieved the growth of extremely-high quality SiC crystal with two-step solution method with specially-designed seed crystals. The two-step growth consists of 1st step growth on Si-face for the reduction of threading dislocations and 2nd step grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177c204575323acd728e2054e2f0a0ee
https://doi.org/10.4028/www.scientific.net/msf.924.60
https://doi.org/10.4028/www.scientific.net/msf.924.60
Publikováno v:
Journal of Crystal Growth. 468:874-878
We propose a two-step silicon carbide (SiC) solution growth method for dislocation reduction to produce the high-quality silicon carbide SiC crystals. The two-step growth consists of the growth on a Si face and a C face. Firstly, seed crystal with lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ffb60a40c65432b9ce8f07e4968fcf0
https://doi.org/10.1016/j.jcrysgro.2016.11.100
https://doi.org/10.1016/j.jcrysgro.2016.11.100
Publikováno v:
Materials Science Forum. 897:32-35
In order to design a solvent for high-purity SiC solution growth, the impurity incorporation and the carbon solubility of various solvent materials have been investigated. Among the transition metal elements, the impurity elements of Cr, Ti, V and Hf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96da26ccec380bf04a19b91adaad0ef8
https://doi.org/10.4028/www.scientific.net/msf.897.32
https://doi.org/10.4028/www.scientific.net/msf.897.32
Publikováno v:
Materials Science Forum. 897:24-27
In order to achieve a high-quality SiC crystal in solution growth, one of the most difficult issues is to grow a thick layer on Si face avoiding polytype transformation. In this case, two-dimensional nucleation, which leads to the polytype transforma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e49a80e4ef584c385460141d098daf9
https://doi.org/10.4028/www.scientific.net/msf.897.24
https://doi.org/10.4028/www.scientific.net/msf.897.24
Publikováno v:
Materials Science Forum. 897:28-31
The relationship between surface morphology and spatial distribution of basal plane dislocations in 4H-SiC crystal grown by top-seeded solution growth on the C face was investigated by the differential interference microscopy as well as X-ray topogra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df6feb6e0632aa411b2707d96d122326
https://doi.org/10.4028/www.scientific.net/msf.897.28
https://doi.org/10.4028/www.scientific.net/msf.897.28