Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Kenta Moto"'
Autor:
Kenta Moto, Kaoru Toko, Tomonari Takayama, Toshifumi Imajo, Takamitsu Ishiyama, Keisuke Yamamoto
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 553-558 (2023)
Fermi-level pinning (FLP) at the metal/Ge interface makes it difficult to control the Schottky barrier height, which forces an ohmic behavior on p-Ge and a rectifying behavior on n-Ge. This study first demonstrates the rectifying behavior on polycrys
Externí odkaz:
https://doaj.org/article/d2accce794694fdbadb6e3a924864d52
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075204-075204-6 (2017)
Low temperature (8%) on insulating substrates is essential to realize next generation flexible electronics. To achieve this, a growth method of high quality GeSn films on insulating substrates by combination of laser irradiation and subsequent therma
Externí odkaz:
https://doaj.org/article/61a15472060343ff8fae736cfba5bed9
Autor:
Keisuke Yamamoto, Kenta Moto, Kaoru Toko, Toshifumi Imajo, Takashi Suemasu, Hiroshi Nakashima
Publikováno v:
IEEE Electron Device Letters. 42:1735-1738
Thin-film transistor (TFT) applications of GeSn have attracted attention as a means of improving the performance of electronic devices. Based on our advanced solid-phase crystallization and TFT process technologies, we comprehensively studied the rel
Publikováno v:
Proceedings of the International Display Workshops. :165
Autor:
Takuto Mizoguchi, Kenta Moto, Takamitsu Ishiyama, Kaoru Toko, Toshifumi Imajo, Takashi Suemasu
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 16:2270001
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Publikováno v:
2019 Compound Semiconductor Week (CSW).
We fabricate a light absorbing GaAs layer on a glass substrate using a Ge seed layer formed by Al-induced crystallization. The GaAs layer grown at 520 °C exhibits the grain size of $\mathbf{50}\ \mu \mathbf{m}$ and the internal quantum efficiency of
Autor:
Keisuke Yamamoto, Hiroshi Nakashima, Kaoru Toko, Takashi Suemasu, Toshifumi Imajo, Kenta Moto
Publikováno v:
ECS Meeting Abstracts. :1353-1353
Introduction Low-temperature synthesis of high carrier mobility thin films on insulating substrates is actively being conducted to dramatically improve the device performance of thin-film transistors (TFTs). Ge is one of the candidates for next-gener
Autor:
Toshifumi Imajo, Kenta Moto, Keisuke Yamamoto, Takashi Suemasu, Hiroshi Nakashima, Kaoru Toko
Publikováno v:
ECS Meeting Abstracts. :1759-1759
1. Introduction To improve the performance of Ge-thin film transistors (TFTs), it is essential not only to enhance the crystallinity of poly-Ge but also comprehensively study the relationship between its electrical properties and TFT characteristics.