Zobrazeno 1 - 10
of 204
pro vyhledávání: '"Kent M. Geib"'
Autor:
Salvatore Campione, Michael G. Wood, Darwin K. Serkland, S. Parameswaran, Jon Ihlefeld, T. S. Luk, Joel R. Wendt, Kent M. Geib, Gordon A. Keeler
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 4, Pp 1-7 (2017)
Epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The
Externí odkaz:
https://doaj.org/article/481d43bec7ad44a091f7af23a2b9a1d7
Autor:
Darwin K. Serkland, Michael G. Wood, Kent M. Geib, Alejandro J. Grine, Gregory M. Peake, Ping-Show Wong, Victor J. Patel
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e50d5af4a5c6b48405f4b563ba5d9fc2
https://doi.org/10.1117/12.2651018
https://doi.org/10.1117/12.2651018
Autor:
Bryan Kaehr, Michael A. Gallegos, Theodore J. Morin, Gregory M. Peake, Kent M. Geib, Michael G. Wood, C. Ryan Tait, Melanie T. Murillo, Alejandro J. Grine, Darwin K. Serkland
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXV.
We have fabricated 3D printed micro-optics to feedback light into an 850-nm VCSEL with reduced top-mirror reflectivity and control its transverse modes. Our goal is to create a single-frequency VCSEL with output power on the order of 10 mW for use in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6086c2c73574af6b4496a7565da7118
https://doi.org/10.1117/12.2583349
https://doi.org/10.1117/12.2583349
Autor:
Gregory M. Peake, Chris P. Hains, Darwin K. Serkland, Kent M. Geib, Alejandro J. Grine, Michael G. Wood, Haley M. So, C. Ryan Tait, Theodore J. Morin
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXIV.
We report on the design and characterization of multi-mirror vertical-cavity surface-emitting lasers (VCSELs) that achieve linewidths less than 2 MHz. We have fabricated all-semiconductor multi-mirror VCSELs at 850 nm that operate in a single mode an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f223a0c7dd158614e10200e8da57b50
https://doi.org/10.1117/12.2547075
https://doi.org/10.1117/12.2547075
Autor:
Kent M. Geib, Joel R. Wendt, Salvatore Campione, Gordon A. Keeler, Michael G. Wood, Ting-Shan Luk, Jon F. Ihlefeld, S. Parameswaran, Darwin K. Serkland
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 4, Pp 1-7 (2017)
Epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::009602f0e2f06346c155610c896c1e6d
https://doi.org/10.1109/jphot.2017.2723299
https://doi.org/10.1109/jphot.2017.2723299
Autor:
Christopher D. Nordquist, Sukwon Choi, Gordon A. Keeler, Gregory M. Peake, R. D. Briggs, Thomas E. Beechem, Kent M. Geib, John F. Klem, Gary A. Patrizi, Jascinda Clevenger, Ryan A. Shaffer, Anna Tauke-Pedretti
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 6:740-748
Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::431c1c1d4e313646b364b21b92682b65
https://doi.org/10.1109/tcpmt.2016.2541615
https://doi.org/10.1109/tcpmt.2016.2541615
Autor:
Gregory M. Peake, Haley M. So, Kent M. Geib, Christopher P. Hains, Gordon A. Keeler, Darwin K. Serkland, Michael G. Wood, Alejandro J. Grine
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXII.
We report on mode selection and tuning properties of vertical-external-cavity surface-emitting lasers (VECSELs) containing coupled semiconductor and external cavities of total length less than 1 mm. Our goal is to create narrowlinewidth (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3399c3967fc65aca118983f5b7ad083a
https://doi.org/10.1117/12.2291197
https://doi.org/10.1117/12.2291197
Autor:
Jon F. Ihlefeld, Michael G. Wood, Ting S. Luk, S. Parameswaran, Salvatore Campione, Darwin K. Serkland, Gordon A. Keeler, Kent M. Geib, Joel R. Wendt
Publikováno v:
2017 IEEE Photonics Society Summer Topical Meeting Series (SUM).
We demonstrate high-speed operation of ultracompact electroabsorption modulators based on epsilon-near-zero confinement in indium oxide (In 2 O 3 ) on silicon using field-effect carrier density tuning. Additionally, we discuss strategies to enhance m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ba25e392240a86bfcf8f720373052d2
https://doi.org/10.1109/phosst.2017.8012720
https://doi.org/10.1109/phosst.2017.8012720
Autor:
Kent M. Geib, Joel R. Wendt, Alejandro J. Grine, Salvatore Campione, S. Parameswaran, Ting S. Luk, Darwin K. Serkland, Jon F. Ihlefeld, Gordon A. Keeler
Publikováno v:
OFC
We report the first high-speed demonstration of a compact electroabsorption modulator based on epsilon-near-zero confinement in conducting oxide films. The non-resonant, 4μm-long device operates simultaneously over the entire C band through field-ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::427c77dcff56031c3d49a3a4476b0361
https://doi.org/10.1364/ofc.2017.th3i.1
https://doi.org/10.1364/ofc.2017.th3i.1
Autor:
Ting S. Luk, Kent M. Geib, Darwin K. Serkland, Joel R. Wendt, S. Parameswaran, Jon F. Ihlefeld, Gordon A. Keeler, Michael G. Wood, Salvatore Campione
Publikováno v:
Frontiers in Optics 2017.
We study the role of carrier mobility in transparent conducting oxides integrated into epsilon-near-zero modulators. High-mobility materials including CdO enable sub-micron length electroabsorption modulators through >4dB/µm extinction ratios.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e02a0a00949faaacc5e7074fbf38fcad
https://doi.org/10.1364/fio.2017.jw3a.46
https://doi.org/10.1364/fio.2017.jw3a.46