Zobrazeno 1 - 10
of 178
pro vyhledávání: '"Kensuke Oki"'
Publikováno v:
Materials Science in Semiconductor Processing. 148:106794
Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis
Autor:
Masaya Chizaki, Tomoya Nakayama, Yoshihiro Ishitani, Bei Ma, Hideto Miyake, Ken Morita, Shungo Okamoto, Bojin Lin, Kensuke Oki, Daisuke Iida, Kazuhiro Ohkawa
Publikováno v:
Gallium Nitride Materials and Devices XVI.
Longitudinal optical (LO) phonon has strong electric interaction with particles and fields. Particularly, the interaction in III-nitrides is more significant than that in conventional III-V materials. We show phonon-exciton interaction properties in
Publikováno v:
Journal of Luminescence. 243:118603
In ultraviolet light emission devices, excitons are a high-efficiency emission source. However, the mechanism of experimentally observed dependence of excitonic radiative lifetimes on temperature (T) has not been discovered. We present a numerical si
Autor:
Bei Ma, Kensuke Oki, Kazuhiro Ohkawa, Yoshihiro Ishitani, Naomichi Saito, Shungo Okamoto, Ken Morita
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Since heat generation in electronic devices induces the degradation of performance, the understanding of their thermal properties is required. InGaN and AlInN alloys are possibly the key materials for optical devices in green gap and high power trans
Autor:
Makoto Ichimura, M. Hirata, K. Ichimura, Yousuke Nakashima, Junko Kohagura, Mamoru Shoji, T. Shikama, Akira Tonegawa, Noriyasu Ohno, Shinji Nagata, Hirotaka Kubo, Tsuyoshi Kariya, H. Takeda, S. Takahashi, M. Iwamoto, Y. Hosoda, Yoshiki Hirooka, Ryuya Ikezoe, Yoshio Ueda, S. Kigure, Masayuki Yoshikawa, Nobuhiro Nishino, Suguru Masuzaki, Kensuke Oki, Isao Katanuma, M. Fukumoto, T. Numakura, Tsuyoshi Imai, Akiyoshi Hatayama, K. Hosoi, Hiroto Matsuura, Shinichiro Kado, Nobuyuki Asakura, Mizuki Sakamoto, Akio Sagara, R. Minami
Publikováno v:
Journal of Nuclear Materials. 463:537-540
This paper describes the results of the experiments performed on Tandem Mirror device GAMMA 10/PDX mainly using a new “divertor simulation experimental module (D-module)” installed on one of the end mirror exits which is specially designed to inv
Autor:
Ryuya Ikezoe, Kazuya Ichimura, M. Mizuguchi, S. Sumida, T. Yokoyama, R. Minami, M. Hirata, Yousuke Nakashima, Y. Iwamoto, Mizuki Sakamoto, T. Okada, Masayuki Yoshikawa, Kensuke Oki, Makoto Ichimura, S. Jang, K. Takeyama
Publikováno v:
Fusion Science and Technology. 68:136-141
In the GAMMA 10 tandem mirror, divertor simulation experiments that utilize particle flux toward the west end region (called end-loss flux) have been implemented. Since a positive correlation has b...
Autor:
Kensuke Oki, Y. Hosoda, M. Iwamoto, Mizuki Sakamoto, T. Imai, Yousuke Nakashima, Makoto Ichimura, K. Shimizu, Kazuya Ichimura, H. Takeda
Publikováno v:
Fusion Science and Technology. 68:130-135
In this paper, detailed results on spectral measurement are reported and the argument on impurity transport is presented from the comparison of the spectral measurements in the end-cell and the plu...
Autor:
Yoriko Shima, Y. Nagayama, Tsuyoshi Imai, Mizuki Sakamoto, Xiaolong Wang, S. Kanno, Atsushi Mase, Kensuke Oki, Daisuke Kuwahara, Masayuki Yoshikawa, Junko Kohagura, Yousuke Nakashima, Makoto Ichimura
Publikováno v:
ResearcherID
In GAMMA 10/PDX, divertor simulation studies have been started as a new research plan by using end-loss plasma flux at the end-mirror region. A divertor simulation experimental module (D-module) was installed in the west end-cell. Here we introduce a
Autor:
Masayuki Yoshikawa, Xiaolong Wang, T. Numakura, Makoto Ichimura, Y. Hosoda, H. Takeda, K. Hosoi, K. Shimizu, Isao Katanuma, Mizuki Sakamoto, K. Ichimura, Tsuyoshi Imai, Yousuke Nakashima, Junko Kohagura, R. Minami, Tsuyoshi Kariya, Kensuke Oki, M. Hirata, M. Iwamoto, Ryuya Ikezoe
Publikováno v:
Fusion Science and Technology. 68:28-35
This paper describes the recent results of divertor simulation research toward the realization of the detached plasma using the end-mirror of a large tandem mirror device. The additional ion cyclotron range of frequency heating in the anchor-cells fo
Publikováno v:
Physical Review B. 96
Population distributions and transition fluxes of the $A$ exciton in bulk GaN are theoretically analyzed using rate equations of states of the principal quantum number $n$ up to 5 and the continuum. These rate equations consist of the terms of radiat