Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kensuke Matsuzawa"'
Publikováno v:
Journal of the American Chemical Society. 141:14736-14741
Preparation of an unzipping polyester is reported. The monomer was prepared from benzoic acid in a four-step sequence. Step growth polymerization of the monomer provides the target polymer. Efficient depolymerization upon irradiation at 254 nm was co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a919fc529ec213a46b185e3e128c978
https://doi.org/10.1021/jacs.9b06285
https://doi.org/10.1021/jacs.9b06285
Autor:
Takeo Yoshikawa, Yurika Komatsu, Kensuke Matsuzawa, Rina Otsuka, Fumito Naganuma, Tadaho Nakamura, Kazuhiko Yanai
Publikováno v:
Proceedings for Annual Meeting of The Japanese Pharmacological Society. 95:1-O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d59f78e068f9b90fb2cc8306c8e218d4
https://doi.org/10.1254/jpssuppl.95.0_1-o-001
https://doi.org/10.1254/jpssuppl.95.0_1-o-001
Autor:
Tomotaka Yamada, Katsumi Ohmori, Kensuke Matsuzawa, Daisuke Kawana, Shogo Matsumaru, Fujii Tatsuya, Yoshitaka Komuro
Publikováno v:
Journal of Photopolymer Science and Technology. 29:489-493
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::693b42f3bc529f24982caa40df2627b6
https://doi.org/10.2494/photopolymer.29.489
https://doi.org/10.2494/photopolymer.29.489
Autor:
Ryan A. Mesch, Kensuke Matsuzawa, Scott T. Phillips, Michael G. Olah, Wade Wang, C. Grant Willson
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
1HZ³ self -immolating ´ RU³XQ]LSSLQJ´ polymer s, materials that depolymerize in response to irradiation , w ere designed and prep ared successfully . We studied several candidate polymers and ultimately chose two of the m for further development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a564c5e2f30f746b248bcc32b3f1b983
https://doi.org/10.1117/12.2085780
https://doi.org/10.1117/12.2085780
Publikováno v:
SPIE Proceedings.
Out of band (OoB) radiation has been regarded as one of the key issues on Extreme Ultra Violet Lithography (EUVL). OoB light especially in the deep ultraviolet (DUV) region have a negative impact on image contrast and resist profile, since general ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94148895acebe8523e1484c49d87ef30
https://doi.org/10.1117/12.916355
https://doi.org/10.1117/12.916355
Autor:
Jun Iwashita, Suzuki Kenta, Masahito Yahagi, Kensuke Matsuzawa, Kazufumi Sato, Isamu Takagi, Akihiro Oshima, Kazuyuki Enomoto, Seiichi Tagawa, Sachiko Yoshizawa, Kenri Konno, Taku Hirayama
Publikováno v:
SPIE Proceedings.
The concept of nonlinear acid diffusion coefficient would be emphasized to achieve better latent image quality, resulting in better lithographic performance. Focusing on realizing the concept, we previously reported about a main chain decomposable st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7c3c13dfbfef72ae20b83b3fcea04ab
https://doi.org/10.1117/12.879349
https://doi.org/10.1117/12.879349
Autor:
Kensuke Matsuzawa, Keita Ishiduka, Yoshiyuki Utsumi, Akiya Kawaue, Junichi Onodera, Yoshitaka Komuro, Hideo Hada, Takehiro Seshimo
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
In current optical lithography, resolution is required to reach for 45 nm half-pitch and a chemically amplified resist (CAR) is used for a wide variety of applications. For ArF lithography beyond the 45 nm half-pitch, it is important to control patte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee3ba5fa53ce5d90266fa99f43d55c82
https://doi.org/10.1117/12.815190
https://doi.org/10.1117/12.815190
Autor:
Yoshiyuki Utsumi, Satoshi Ogawa, Kensuke Matsuzawa, Takashi Haga, Makiko Irie, Yoshitaka Komuro, Hideo Hada
Publikováno v:
Japanese Journal of Applied Physics. 49:06GF03
The effects of acid generation efficiency and other properties on the resolution, line width roughness (LWR), and sensitivity (RLS) tradeoff for extreme ultraviolet (EUV) photoresists were evaluated under electron beam (EB) exposure. The acid generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3badabd425c70a0666f53826b7126ae6
https://doi.org/10.1143/jjap.49.06gf03
https://doi.org/10.1143/jjap.49.06gf03
Autor:
Keita Ishiduka, Junichi Onodera, Akiya Kawaue, Yoshitaka Komuro, Hideo Hada, Takehiro Seshimo, Kensuke Matsuzawa, Yoshiyuki Utsumi
Publikováno v:
Japanese Journal of Applied Physics. 48:06FC07
In current optical lithography, resolution is required to reach for 45 nm half-pitch and a chemically amplified resist (CAR) is used for a wide variety of applications. For ArF lithography beyond the 45 nm half-pitch, it is important to control patte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f25463b418780f1935610b80c95c3c9
https://doi.org/10.1143/jjap.48.06fc07
https://doi.org/10.1143/jjap.48.06fc07