Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Kenny Ong"'
Autor:
Kenny Ong Kheng Yee1, Chee Kok Yoon1, Seman, Zamtira2, Chhoa Keng Hong1, Siti Nor Fadhlina Misron3, Chin Han Lim1
Publikováno v:
Malaysian Journal of Medical Sciences. 2023, Vol. 30 Issue 2, p83-89. 7p.
Publikováno v:
Opto-Electronic Advances, Vol 1, Iss 8, Pp 180014-1-180014-6 (2018)
A novel spatial double-pulse laser ablation scheme is investigated to enhance the processing quality and efficiency for nanosecond laser ablation of silicon substrate. During the double-pulse laser ablation, two splitted laser beams simultaneously ir
Externí odkaz:
https://doaj.org/article/9921e474b7ea4b3485e76da5ea607e16
Publikováno v:
Malaysian Journal Of Psychiatry. 31:92-95
Publikováno v:
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Publikováno v:
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Publikováno v:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
X-ray reflectivity (XRR) study is performed on single and multi-stacked TaN/Ta thin films. A model using single or multiple layers for TaN and Ta gives a good fit between the experimental and simulation results. The effect of PVD etch-back process on
Autor:
Bey Temsamani Abdellatif, M. Afendi, Z. Ahmad, N.A.M. Amin, Radostina A. Angelova, F.C. Ani, A.K. Ariffin, N.A. Aziz, Nan Cho, Joseph Colangelo, Maurice N. Collins, Richard Coyle, Eric Dalton, R. Daud, Zhili Dong, Emmanuel Ferrier, Mohammad A. Gharaibeh, Younan Hua, Víctor Hugo Jacobo, Xiaoming Li, Binghai Liu, M.S. Abdul Majid, Abdel Salam Hamdy Makhlouf, Zhiqiang Mo, A. Mohamad, Kenny Ong, E.P. Ooi, Armando Ortiz, Jeff Punch, Guang Ren, Carlos Rolando Rios-Soberanis, A.A. Saad, Z. Samsudin, Rafael Schouwenaars, Manh Tien Tran, Xuan Hong Vu, Jason Wheeler, W. John Wolfgong, Yuzhe Zhao, S. Zulfiqar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6253baffd9fa551ebaac08127fa65bb6
https://doi.org/10.1016/b978-0-08-101937-5.00021-x
https://doi.org/10.1016/b978-0-08-101937-5.00021-x
This chapter addresses the issues of the electron beam radiation damage that are commonly encountered during physical failure analysis (PFA) in the modern semiconductor industry by scanning electron microscopy, focus ion beam, and transmission electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::810dfb40278205b32fac6d84c9bcaab6
https://doi.org/10.1016/b978-0-08-101937-5.00002-6
https://doi.org/10.1016/b978-0-08-101937-5.00002-6
Publikováno v:
Opto-Electronic Advances, Vol 1, Iss 8, Pp 180014-1-180014-6 (2018)
A novel spatial double-pulse laser ablation scheme is investigated to enhance the processing quality and efficiency for nanosecond laser ablation of silicon substrate. During the double-pulse laser ablation, two splitted laser beams simultaneously ir
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