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Autor:
Adele E. Schmitz, R.H. Walden, Loi D. Nguyen, Kenny C. Hum, Richard C. Wong, B.M. Paine, Michael J. Delaney
Publikováno v:
Microelectronics Reliability. 41:1115-1122
The reliability of AlInAs/GaInAs high electron mobility transistor (HEMT) monolithic microwave integrated circuits on InP substrates from HRL Labs has been studied with elevated-temperature lifetests on Ka-band LNAs, as well as ramped-voltage tests o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4f633ac88d9fe688b6c3115fc2d56cf
https://doi.org/10.1016/s0026-2714(01)00083-x
https://doi.org/10.1016/s0026-2714(01)00083-x
