Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kenneth Torres"'
Autor:
S. Borthakur, Husam N. Alshareef, R. Bergmann, L. Larson, A. Hou, D.J. Derro, A. Agarwal, Howard R. Huff, F. Shaapur, Robert W. Murto, George A. Brown, Billy Nguyen, Mark Gardner, P. Lysaght, Chris M. Sparks, Gennadi Bersuker, Deborah J. Riley, Loyd Perrymore, C. Lim, Kenneth Torres, Peter Zeitzoff, M. Freiler, S. Lim, Y. Kim, G. Gebara, Brendan Foran, Chadwin D. Young, J.E. Lim, M.D. Jackson, B. Bowers, J. Gutt, Joel Barnett, P.J. Chen
Publikováno v:
Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).
We review several gate stack fabrication issues critical for robust, commercially viable tools, including assessment of possible fab contamination due to the higher-k gate dielectrics and the role of subsequent thermal procedures during, for example,
Autor:
Swaroop Ganguly, Taras A. Kirichenko, Hong-Jyh Li, Peter Zeitzoff, Sanjay K. Banerjee, Kenneth Torres, P. Kohli
Publikováno v:
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with B in
Autor:
G. Williamson, P. Lysaght, Peter Zeitzoff, Billy Nguyen, S. Kim, Kenneth Torres, V.H.C. Watt, J. A. Fair, G. Gale, M.D. Jackson, M. C. Gilmer, T. Y. Luo, George A. Brown, Carolyn F. H. Gondran, M. T. Schulberg, T. Tamagawa, Gennadi Bersuker, R. Amos, Howard R. Huff, D. Brady, Franz T. Geyling, J. Guan, L. Vishnubhotla
Publikováno v:
MRS Proceedings. 567
A design-of-experiments methodology was implemented to assess the commercial equipment viability to fabricate the high-K dielectrics Ta2O5, TiO2 and BST (70/30 and 50/50 compositions) for use as gate dielectrics. The high-K dielectrics were annealed
Autor:
Howard R. Huff, F. Shaapur, Kenneth Torres, Alain C. Diebold, A. Karamcheti, Peter Zeitzoff, X. Guo, L. Vishnubhotla, V.H.C. Watt, Gennadi Bersuker, T. Tamagawa, J. Guan, Xiaomu Wang, D. Brady, M.D. Jackson, George A. Brown, T. Y. Luo, Tso-Ping Ma, M. C. Gilmer, G. Gale
Publikováno v:
MRS Proceedings. 592
This paper describes the electrical and physical characteristics of ultrathin Jet Vapor Deposited (JVD) Silicon Oxynitride films. Capacitance-Voltage measurements indicate an equivalent oxide thickness (EOT) of less than 2 nm, taking into account the
Publikováno v:
MRS Proceedings. 470
This paper summarizes a Joint Development Project between SEMITOOL, member company and SEMATECH to demonstrate and develop the fast ramp vertical furnace. The goal of this project was to deliver a production vertical furnace capable of heating and co
Autor:
Arthur H. Howell, Norman A. Preble, Earl L. Poole, Donald M. Hatfield, William H. Gates, H. R. Gregg, Aldo Leopold, Allan Brooks, Franklin H. May, J. Kenneth Torres, Lyndon L. Hargrave, G. Willett, Claude W. Hibbard, H. L. Whitaker, W. Robert Eadie, D. G. Nichols, Arnold J. Nicholson, Vernon Bailey, Earl E. Hoover, Robert T. Hatt, Merlin K. Potts, Horace Elmer Wood, Thomas Barbour
Publikováno v:
Journal of Mammalogy. 18:95
Autor:
J. Kenneth Torres
Publikováno v:
Journal of Mammalogy. 18:100-100
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Conference
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