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of 6
pro vyhledávání: '"Kenneth Scott Alexander Butcher"'
Publikováno v:
Coatings; Volume 11; Issue 12; Pages: 1506
Coatings, Vol 11, Iss 1506, p 1506 (2021)
Coatings, Vol 11, Iss 1506, p 1506 (2021)
Recent designs have allowed hollow cathode gas plasma sources to be adopted for use in plasma-enhanced atomic layer deposition with the benefit of lower oxygen contamination for non-oxide films (a brief review of this is provided). From a design pers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4a55a10671a9cf943a5206aa20d24e1
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:031207
In this paper, the authors report on epitaxial thin InN layers grown on commercially available undoped GaN buffer layers and on Ga2O3 interlayers produced by Migration-Enhanced Afterglow Epitaxy (MEAglow). The InN layers reported here, also grown by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c78ef570550aeea21909e2b54e1d4fac
https://doi.org/10.1116/1.4874535
https://doi.org/10.1116/1.4874535
Autor:
Binh Huy Le, Guillaume Gervais, Benjamin Schmidt, Songrui Zhao, Shizhao Fan, Michel Savard, Zetian Mi, Kenneth Scott Alexander Butcher, Nhung Hong Tran
Publikováno v:
Applied Physics Letters. 103:262101
We report on a detailed study of the structural and optical properties of nonstoichiometric nitrogen-rich InN grown on sapphire substrates, by migration enhanced afterglow deposition. The samples were polycrystalline, with the presence of InN dots. U
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ab7b8c90403a63587cfa61bd72e1b0e
https://doi.org/10.1063/1.4857535
https://doi.org/10.1063/1.4857535
Publikováno v:
Applied Physics Letters. 100:011913
For some InN films large amounts of excess nitrogen are seen at low growth temperatures. Recent studies have revised downward the defect formation energies for several forms of nitrogen rich point-defects in InN. Here we calculate an activation energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbc628fa18cb4fa79b2ebcee22a43c34
https://doi.org/10.1063/1.3673839
https://doi.org/10.1063/1.3673839
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Publikováno v:
Japanese Journal of Applied Physics; June 1992, Vol. 31 Issue: 6 p1909-1909, 1p