Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kenneth Scott A. Butcher"'
Publikováno v:
Coatings; Volume 11; Issue 12; Pages: 1506
Coatings, Vol 11, Iss 1506, p 1506 (2021)
Coatings, Vol 11, Iss 1506, p 1506 (2021)
Recent designs have allowed hollow cathode gas plasma sources to be adopted for use in plasma-enhanced atomic layer deposition with the benefit of lower oxygen contamination for non-oxide films (a brief review of this is provided). From a design pers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4a55a10671a9cf943a5206aa20d24e1
Autor:
Rositsa Gergova, Vasil Georgiev, Dimiter Alexandrov, Dimka Georgieva, Kenneth Scott A. Butcher, G. Togtema
Publikováno v:
Solid-State Electronics. 103:44-48
This paper presents observations of a previously unidentified source of performance limitation for GaN–InGaN LED devices. While most studies focus on output saturation known as ‘current droop’ from InGaN layer effects, we show an alike influenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b279ec1be9f0540c50b1975a85be05d
https://doi.org/10.1016/j.sse.2014.08.009
https://doi.org/10.1016/j.sse.2014.08.009
Publikováno v:
Applied Surface Science. 353:103-105
Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e0b6317578f49de022b2a39d365aadb
https://doi.org/10.1016/j.apsusc.2015.06.093
https://doi.org/10.1016/j.apsusc.2015.06.093
Publikováno v:
Applied Surface Science. 258:9997-10001
The purpose of this study was to detect the presence of excess Ga- or In-metal on the surface of GaN or InN epitaxial layers, using AFM 1 and nanoindentation. We ascertain that in this case AFM phase-contrast images could not be used for actual mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::809ecacc0329022c6eb5192be6cb5957
https://doi.org/10.1016/j.apsusc.2012.06.062
https://doi.org/10.1016/j.apsusc.2012.06.062
Autor:
Vasil Georgiev, Penka Terziyska, Dimka Georgieva, Dimiter Alexandrov, Kenneth Scott A. Butcher
Publikováno v:
physica status solidi c. 9:1070-1073
Some initial results are presented for gallium nitride and indium nitride thin films grown on c-plane sapphire using a prototype migration enhanced afterglow (MEAglow) system. Smooth surfaces of less than 1 nm root mean square surface roughness have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6e8e4d2d13f1a87f6a11a56b007df20
https://doi.org/10.1002/pssc.201100209
https://doi.org/10.1002/pssc.201100209
Autor:
Penka Terziyska, Peter W. Binsted, Kenneth Scott A. Butcher, Vasil Georgiev, Dimiter Alexandrov, Dimka Georgieva
Publikováno v:
physica status solidi (a). 209:41-44
InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22a345e5f0e380ee43201f1336dbdf99
https://doi.org/10.1002/pssa.201100102
https://doi.org/10.1002/pssa.201100102
Autor:
Penka Terziyska, Dimiter Alexandrov, Peter W. Binsted, Kenneth Scott A. Butcher, Daniela Gogova, Guosheng Wu
Publikováno v:
Materials Letters. 106:155-157
Self-catalytic growth of InN nanopillars on (0001) sapphire is reported under In-rich conditions, using the Migration Enhanced Afterglow (MEAglow) growth technique. The nanopillars are up to 2 μm in length and 100–200 nm in diameter, terminated wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a0a490fab48eb861a5876a2abc9e8a3
https://doi.org/10.1016/j.matlet.2013.04.104
https://doi.org/10.1016/j.matlet.2013.04.104
Autor:
Vasil Georgiev, S. Skerget, Peter W. Binsted, Penka Terziyska, Kenneth Scott A. Butcher, Dimka Georgieva, Rositsa Gergova
Publikováno v:
Journal of Applied Physics. 121:013301
It is shown that attractive electrostatic interactions between regions of positive charge in RF plasmas and the negative charge of metal wetting layers, present during compound semiconductor film growth, can have a greater influence than substrate te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c4f4596aa1dfe5959588bc74f5c6cac
https://doi.org/10.1063/1.4973483
https://doi.org/10.1063/1.4973483
Publikováno v:
CCECE
A new analytical model for a two terminal metal-oxide-Gallium Nitride/Indium Gallium Nitride heterojunction structure is presented. This model characterizes the space charge layer created by electron tunneling in the structure's channel which is made
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf0fde9312f9208b408112b6ffb3378
https://doi.org/10.1109/ccece.2012.6334924
https://doi.org/10.1109/ccece.2012.6334924
Autor:
Vasil Georgiev, Peter W. Binsted, Penka Terziyska, Dimka Georgieva, Rositsa Gergova, Kenneth Scott A. Butcher, Dimiter Alexandrov
Publikováno v:
MRS Proceedings. 1396
In this paper we discuss the formation of InN on GaN heterostructures. Film growth was accomplished using a new method coined Migration Enhanced Epitaxial Afterglow (MEAglow), an improved form of pulsed delivery Plasma Enhanced Chemical Vapour Deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fb139da155d2909ebda3ba7a8c5a0cf
https://doi.org/10.1557/opl.2012.15
https://doi.org/10.1557/opl.2012.15