Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kenneth M. Robb"'
Autor:
J.Y. Wu, Wesley Yu, J.F. Lin, Euing Lin, A.N. Other, N.H. Yang, Alessandro Baldaro, Ted Ming-Lang Guo, Kenneth M. Robb, M.H. Chang, Chin-Cheng Chien
Publikováno v:
Solid State Phenomena. 219:78-80
As the demand for greater speed in semiconductor devices continues, a typical method of increasing charge mobility is to maximise the silicon strain at the depletion region in p-type transistors through the implementation of “Sigma Cavity” struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a389d1e0ace0c4a64f33734badc9d181
https://doi.org/10.4028/www.scientific.net/ssp.219.78
https://doi.org/10.4028/www.scientific.net/ssp.219.78
Autor:
Kenneth M. Robb
Publikováno v:
Materials Science Forum. :729-732
In this initial phase of work, two methods of backside wafer thinning using ICP plasma etching of two-inch SiC substrates have been considered. Plasma processes were optimized for nonbonded and bonded wafers. The non-bonded process was used to etch 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e76689d9ccfeffa06c6b2b42cd4c05e6
https://doi.org/10.4028/www.scientific.net/msf.556-557.729
https://doi.org/10.4028/www.scientific.net/msf.556-557.729
