Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Kenneth L. Bacher"'
Autor:
William C. Dautremont-Smith, K. Kojima, Kenneth L. Bacher, G.C. Cho, C. Fuchs, S. Srinivasan, R.P. Espindola, N. Chand, F. Jin, Valery Milner
Publikováno v:
Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551).
We report penalty-free 10 Gb/s single-channel transmission with co-pumped distributed Raman amplification using a novel high power, low RIN (relative intensity noise) multimode 14xx DFB pump. No penalty from pump to signal RIN transfer was observed u
Publikováno v:
SPIE Proceedings.
K. Bacher, W.K. Liu, Y. Wu, and T. StewartQuantum Epitaxial Designs, Inc., Bethlehem, PA 18015ABSTRACTQuantum-well intersubband photodetectors (QWIPs) are potentially important devices for mid- and long- infraredwavelengths, especially for focal plan
Publikováno v:
SPIE Proceedings.
A very high performance two-stack, two-color, high strain (HS- ) quantum well infrared photodetector (QWIP) has been demonstrated. The sample was grown on a semi-insulating (100) GaAs by molecular beam epitaxy (MBE). It consists of two stacks of MWIR
Autor:
Kenneth L. Bacher
The objectives of this program were threefold: to reproduce the quantum cascade laser results from Bell Labs in a production environment, to demonstrate the quantum cascade laser at longer wavelengths, and to extend the technology to the GaAs/AlGaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::966bb0db2915553cee7db7ea876cbb0c
https://doi.org/10.21236/ada310727
https://doi.org/10.21236/ada310727
Autor:
F. Jin, Valery Milner, G.C. Cho, N. Chand, Kenneth L. Bacher, S. Srinivasan, R.P. Espindola, William C. Dautremont-Smith, C. Fuchs, Keisuke Kojima
Publikováno v:
Electronics Letters. 38:113
A penalty-free 10 Gbit/s single-channel transmission with co-pumped distributed Raman amplification using novel high power, low relative integrity noise (RIN), multimode 14xx nm distributed feedback pump is reported. No penalty from pump to signal RI
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:825
We have discovered a method to use the physical positioning of one or more effusion cells in a molecular‐beam epitaxy system to cancel out linear growth rate variations along the area sampled by the reflection high‐energy diffraction (RHEED) beam