Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kenneth J. McCullough"'
Autor:
B.N. Rhoads, G. Stojakovic, D.D. Miura, F. Schnabel, David L. Rath, Jeffrey P. Gambino, Ronald G. Filippi, Edward W. Kiewra, R.V.S.S.N. Ravikumar, Kenneth J. McCullough, D.J. Delehanty
Publikováno v:
Solid State Phenomena. :51-54
Autor:
Kenneth J. McCullough, E.W. Kiewra, D.D. Miura, B.N. Rhoads, G. Stojakovic, R.V.S.S.N. Ravikumar, Ronald G. Filippi, David L. Rath, D.J. Delehanty
Publikováno v:
Solid State Phenomena. :31-34
Autor:
Bum Ki Moon, Satya V. Nitta, M. Zaitz, Junjun Liu, Steve Cohen, Derren N. Dunn, Cathy Labelle, Yushan Yan, Hong Lin, Nicholas C. M. Fuller, Griselda Bonilla, Kelly Malone, Zijian Li, Muthumanickam Sankarapandian, Andrew H. Simon, Shuang Li, N. Klymko, Kenneth J. McCullough, E. Todd Ryan, Paul S. Ho, Charles J. Taft, Eva E. Simonyi
Publikováno v:
MRS Proceedings. 863
Future microprocessor technologies will require interlayer dielectric (ILD) materials with a dielectric constant (κ-value) less than 2.5. Organosilicate glass (OSG) materials must be nanoporous to meet this demand. However, the introduction of nanop