Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Kenneth E. Morgan"'
Autor:
Kenneth E. Morgan, Glen A. Slack
Publikováno v:
Journal of Physics and Chemistry of Solids. 75:1054-1074
This paper shows that several alpha-boron type compounds may be useful as high-temperature semiconductors with decent carrier motilities, high electrical resistivity, good optical transparency, good stability under high radiation bombardment, and pos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b88f9c040ae50765676a839a377e2625
https://doi.org/10.1016/j.jpcs.2013.12.021
https://doi.org/10.1016/j.jpcs.2013.12.021
Autor:
Stephan G. Mueller, James R. Grandusky, Joseph A. Smart, Glen A. Slack, Leo J. Schowalter, Robert T. Bondokov, Kenneth E. Morgan, S. B. Schujman
Publikováno v:
physica status solidi (a). 206:1153-1159
We report on the progress of high quality AlN bulk crystal growth by the sublimation-recondensation technique and present a theoretical model for optimizing the growth conditions. The theoretical model is consistent with our experimental findings and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cfdd0470dce423463ce20cfcf2d9b70
https://doi.org/10.1002/pssa.200880758
https://doi.org/10.1002/pssa.200880758
Autor:
Stephan G. Mueller, Joseph A. Smart, Kenneth E. Morgan, Robert T. Bondokov, Glen A. Slack, Mark C. Wood, S. B. Schujman, Leo J. Schowalter
Publikováno v:
Journal of Crystal Growth. 310:4020-4026
We report on the status of the vapor growth of high-quality AlN bulk crystals by the sublimation-recondensation technique for the commercial production of AlN wafers up to 2 in diameter. AlN boules and wafers have been characterized by X-ray Laue bac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f67a4e3217e2f2a745dd06d664c7f288
https://doi.org/10.1016/j.jcrysgro.2008.06.032
https://doi.org/10.1016/j.jcrysgro.2008.06.032
Autor:
Kenneth E. Morgan, Joseph A. Smart, Leo J. Schowalter, Robert T. Bondokov, Tim Bettles, Wayne Liu, S. B. Schujman
Publikováno v:
Journal of Crystal Growth. 310:887-890
In order to meet the need for higher quality nitride substrates, 2 in diameter boules of AlN have been developed and, from them, 2 in diameter substrates have been prepared with high crystalline quality. Double-crystal X-ray rocking curves indicate a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c258ada964e06aec31f044a57ba3ae8b
https://doi.org/10.1016/j.jcrysgro.2007.11.134
https://doi.org/10.1016/j.jcrysgro.2007.11.134
Autor:
Michael Dudley, Balaji Raghothamachar, Kenneth E. Morgan, K. R. Evans, L. J. Schowalter, Glen A. Slack, S. B. Schujman, J. B. Whitlock
Publikováno v:
physica status solidi (c). :1997-2000
Aluminum nitride (AlN) is a promising substrate material for emerging wide-bandgap electronic and opto-electronic devices. Although existing manufacturing technology is less mature than for sapphire and silicon carbide substrates, aluminum nitride ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8290c1d5a79172af1125f03271cc14f
https://doi.org/10.1002/pssc.200303462
https://doi.org/10.1002/pssc.200303462
Publikováno v:
Journal of Crystal Growth. 250:244-250
Bulk AlN single crystal boules have been grown using the sublimation technique and several substrates have been prepared from them. Microstructural characterization of these substrates has been performed using synchrotron white beam X-ray topography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d51610ea8a2ba31c69b806351df3dc6
https://doi.org/10.1016/s0022-0248(02)02253-4
https://doi.org/10.1016/s0022-0248(02)02253-4
Autor:
Kenneth E. Morgan, J. Carlos Rojo, Michael Dudley, Glen A. Slack, Balaji Raghothamachar, Leo J. Schowalter
Publikováno v:
Journal of Crystal Growth. 231:317-321
High-quality, bulk aluminum nitride crystal grains exceeding 1 cm in dimension have been obtained using a self-seeded sublimation–recondensation growth technique at 0.9 mm/h driving rate. X-ray double crystal diffraction and topography show a full-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c38033ade74999b30e66e893f7c70bf
https://doi.org/10.1016/s0022-0248(01)01452-x
https://doi.org/10.1016/s0022-0248(01)01452-x
Fabrication and Characterization of 2-inch diameter AlN Single-Crystal Wafers cut From Bulk Crystals
Publikováno v:
MRS Proceedings. 955
Aluminum nitride (AlN) boules larger than 2 inches in diameter were grown by the sublimation-recondensation technique. X-ray Laue diffraction was used to characterize the crystallinity and orientation of the boules, and 2” dia. substrates were slic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57ed3f4dbfe1a484cf3ff11d7fbf198a
https://doi.org/10.1557/proc-0955-i03-08
https://doi.org/10.1557/proc-0955-i03-08
Autor:
Wayne Liu, Leo J. Schowalter, Robert T. Bondokov, Mark S. Goorsky, Kenneth E. Morgan, Glen A. Slack, Raj Shetty
Publikováno v:
MRS Proceedings. 892
Aluminum nitride (AlN) offers exceptional properties necessary to explore the development of large area substrates for nitride based electronics and photonics. Recent studies on AlN bulk growth using the sublimation-recondensation method developed at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::660d8d454d067a6ed4ddc80fd7fd3cc9
https://doi.org/10.1557/proc-0892-ff30-03
https://doi.org/10.1557/proc-0892-ff30-03
Publikováno v:
MRS Proceedings. 798
A variety of different crucible materials have been suggested and/or employed for the sublimation-recondensation growth of AlN single crystals above 2000 C. Representative materials all have melting points well above 2300 C, a reasonable degree of ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7b62cf58ad27ceee82cf7d6ece73f3
https://doi.org/10.1557/proc-798-y10.74
https://doi.org/10.1557/proc-798-y10.74