Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Kenneth C, Brooks"'
Autor:
Alain E. Kaloyeros, A. N. Saxiena, Kenneth C. Brooks, F. Luehrs, Aiguo Feng, Sumanta K. Ghosh, Jonathan Garhart
Publikováno v:
Journal of Electronic Materials. 19:271-276
Copper films for potential use in multilevel metallization in ULSIC’s were produced by low temperature (250–350° C) metal-organic chemical vapor deposition (LTMOCVD) in atmospheres of pure H2 or mixture Ar/H2 from the β-diketonate precursor bis
Autor:
Peter D, Hanson, Kenneth C, Brooks, Jerry, Case, Michael, Conzemius, Wanda, Gordon, James, Schuessler, Bert, Shelley, Roger, Sifferman, Marlene, Drag, Roberto, Alva, Laura, Bell, Davida, Romano, Candis, Fleishman
Publikováno v:
Veterinary therapeutics : research in applied veterinary medicine. 7(2)
A total of 249 client-owned dogs with osteoarthritis were treated with firocoxib (5 mg/kg/day) or a positive control, etodolac (10-15 mg/kg/day), for 30 days. Veterinary examinations were performed on approximately days 0 (visit 1), 14 (visit 2), and
Autor:
Jonathan Garhart, Marianne Holma, Kenneth C. Brooks, Aiguo Feng, Alain E. Kaloyeros, Wendell S. Williams
Publikováno v:
Superconductivity and Applications ISBN: 9781468475678
Although the recent discovery of high Tc superconductivity in bulk oxide ceramic samples has excited the scientific community, the technological potential of this new class of superconductors, especially in device-oriented applications, will not be f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed90be14762f2013acd969401088891e
https://doi.org/10.1007/978-1-4684-7565-4_17
https://doi.org/10.1007/978-1-4684-7565-4_17
Publikováno v:
MRS Proceedings. 181
As the focus of integration technology inevitably shifts from the present very large scale integration (VLSI) to ultra large scale integration (ULSI) schemes, thus leading to continuous decrease in circuit dimensions, the limitations of present multi
Publikováno v:
MRS Proceedings. 169
High quality Y‐Ba‐Cu‐O thin films were produced by metal‐organic chemical vapor deposition (MOCVD) using metal chelates of P‐diketonate ligands. The films were grown in a cold‐wall CVD reactor at a reactor pressure of 10 torr and substrat
Publikováno v:
Inorganic Chemistry. 24:1110-1111