Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Kenneth B. K. Teo"'
Autor:
Tilmar Kümmell, Andrew Pakes, Ben R. Conran, Annika Grundmann, Gerd Bacher, Dominik Andrzejewski, Clifford McAleese, Kenneth B. K. Teo, Michael Heuken, Andrei Vescan, Holger Kalisch
Publikováno v:
MRS Advances. 5:1625-1633
Most publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f976520b798c7334792fc969282e2b3b
https://doi.org/10.1557/adv.2020.104
https://doi.org/10.1557/adv.2020.104
Autor:
Frederik Westergaard Østerberg, Stiven Forti, Clifford McAleese, Kenneth B. K. Teo, Binbin Zhou, Iwona Pasternak, Haofei Shi, Da Luo, Steven Brems, Odile Bezencenet, Camilla Coletti, Cedric Huyghebaert, Pierre Legagneux, Neeraj Mishra, Ben R. Conran, Timothy J. Booth, Bruno Dlubak, Abhay Shivayogimath, Alexandre Jouvray, Amaia Zurutuza, Cunzhi Sun, Birong Luo, Jie Ji, David M. A. Mackenzie, Qian Shen, Wlodek Strupinski, Dirch Hjorth Petersen, Peter Bøggild, Bjarke Sørensen Jessen, Ilargi Napal, Peter Uhd Jepsen, Alba Centeno, Patrick Rebsdorf Whelan, Deping Huang, Meihui Wang, Pierre Seneor, Rodney S. Ruoff
Publikováno v:
2D Materials
2D Materials, IOP Publishing, 2021, ⟨10.1088/2053-1583/abdbcb⟩
Whelan, P R, Zhou, B, Bezencenet, O, Shivayogimath, A, Mishra, N, Shen, Q, Jessen, B S, Pasternak, I, Mackenzie, D M A, Ji, J, Sun, C, Seneor, P, Dlubak, B, Luo, B, Østerberg, F W, Huang, D, Shi, H, Luo, D, Wang, M, Ruoff, R S, Conran, B R, McAleese, C, Huyghebaert, C, Brems, S, Booth, T, Napal, I, Strupinski, W, Petersen, D H, Forti, S, Coletti, C, Jouvray, A, Teo, K B K, Centeno, A, Zurutuza, A, Legagneux, P, Jepsen, P U & Bøggild, P 2021, ' Case studies of electrical characterisation of graphene by terahertz time-domain spectroscopy ', 2D materials, vol. 8, no. 2, 022003 . https://doi.org/10.1088/2053-1583/abdbcb
2D Materials, IOP Publishing, 2021, ⟨10.1088/2053-1583/abdbcb⟩
Whelan, P R, Zhou, B, Bezencenet, O, Shivayogimath, A, Mishra, N, Shen, Q, Jessen, B S, Pasternak, I, Mackenzie, D M A, Ji, J, Sun, C, Seneor, P, Dlubak, B, Luo, B, Østerberg, F W, Huang, D, Shi, H, Luo, D, Wang, M, Ruoff, R S, Conran, B R, McAleese, C, Huyghebaert, C, Brems, S, Booth, T, Napal, I, Strupinski, W, Petersen, D H, Forti, S, Coletti, C, Jouvray, A, Teo, K B K, Centeno, A, Zurutuza, A, Legagneux, P, Jepsen, P U & Bøggild, P 2021, ' Case studies of electrical characterisation of graphene by terahertz time-domain spectroscopy ', 2D materials, vol. 8, no. 2, 022003 . https://doi.org/10.1088/2053-1583/abdbcb
Graphene metrology needs to keep up with the fast pace of developments in graphene growth and transfer. Terahertz time-domain spectroscopy (THz-TDS) is a non-contact, fast, and non-destructive characterization technique for mapping the electrical pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::520430e160148c99129cea18cd899f41
Autor:
Ben R. Conran, Abhay Shivayogimath, Patrick Rebsdorf Whelan, Peter Bøggild, Filippo Fabbri, Clifford McAleese, Kenneth B. K. Teo, Stefano Roddaro, Leonardo Martini, J. I. Flege, Bjarke Sørensen Jessen, Lars Buß, Camilla Coletti, Neeraj Mishra, Stiven Forti, I. Aliaj, Jens Falta
Publikováno v:
Small. 15:1970273
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51747255e606ff0fa924ee7ee9c95e21
https://doi.org/10.1002/smll.201970273
https://doi.org/10.1002/smll.201970273
Autor:
Arlindo Silva, Edward Tiong, Kenneth B. K. Teo, Maria C. Yang, Olivia Seow, Daniel D. Jensen, Kristin L. Wood
Publikováno v:
Volume 7: 30th International Conference on Design Theory and Methodology.
Economic use of early stage prototyping is of paramount importance to companies engaged in the development of innovative products, services and systems because it directly impacts their bottom-line [1, 2]. There is likewise a need to understand the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08b2f0de6679e590898a198baedb5110
https://doi.org/10.1115/detc2018-85747
https://doi.org/10.1115/detc2018-85747
Autor:
Daniel D. Jensen, Maria C. Yang, Edward Tiong, Kenneth B. K. Teo, Arlindo Silva, Kristin L. Wood, Olivia Seow
Publikováno v:
Volume 7: 30th International Conference on Design Theory and Methodology.
Despite variances in contexts and styles of design activity, recurrent patterns emerge in design innovation approaches and processes which lend themselves to analysis and discussion. Using a Design Innovation framework [1] that is built, in part, on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42b324ce1c85e75d5dfed6ed5d1633e
https://doi.org/10.1115/detc2018-85758
https://doi.org/10.1115/detc2018-85758
Autor:
Asen Asenov, Jie Liang, A. Dhavamani, Vihar P. Georgiev, Jean Dijon, Reetu Raj Pandey, G. Goncalves, Katharina Lilienthal, Aida Todri-Sanial, Hanako Okuno, R. Ramos, Bernd Gotsmann, Jaehyun Lee, Fabian Könemann, Bingan Chen, Benjamin Uhlig, D. Renaud, Toufik Sadi, Kenneth B. K. Teo, Dipankar Kalita, Salim Berrada
Publikováno v:
IEEE International Electron Devices Meeting
IEDM: International Electron Devices Meeting
IEDM: International Electron Devices Meeting, Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268502⟩
2017 IEEE International Electron Devices Meeting (IEDM)
IEDM: International Electron Devices Meeting
IEDM: International Electron Devices Meeting, Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268502⟩
2017 IEEE International Electron Devices Meeting (IEDM)
International audience; We investigate, by combining physical and electrical measurements together with an atomistic-to-circuit modeling approach, the conductance of doped carbon nanotubes (CNTs) and their eligibility as possible candidate for next g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de6ad397a4b58dc4907ecafb2b8312d4
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01795777
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01795777
Autor:
Kenneth B. K. Teo, Chen Xu, Jun Deng, Yiyang Xie, Weiling Guo, Hongda Chen, Yanxu Zhu, Meng Xun, Kun Xu, Jie Sun
Publikováno v:
IEEE Transactions on Electron Devices. 62:2802-2808
Graphene GaN-based Schottky ultraviolet detectors are fabricated. The monolayer graphene is grown by chemical vapor deposition. The graphene is much more transparent than metals, as confirmed by the fact that our devices retain their high responsivit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45b9924aedc9f6481ceb37467fc83df8
https://doi.org/10.1109/ted.2015.2453399
https://doi.org/10.1109/ted.2015.2453399
Autor:
Moon Hyo Kang, William I. Milne, Cinzia Cepek, Bingan Chen, Matthew T. Cole, Jong Min Kim, Lawrence Wu, Kenneth B. K. Teo, Guangyu Qiu, Alex Jouvray
Publikováno v:
JOURNAL OF MATERIALS CHEMISTRY C 5 (2017): 9886–9897. doi:10.1039/c7tc02263h
info:cnr-pdr/source/autori:Kang M.H.; Qiu G.; Chen B.; Jouvray A.; Teo K.B.K.; Cepek C.; Wu L.; Kim J.; Milne W.I.; Cole M.T./titolo:Transport in polymer-supported chemically-doped CVD graphene/doi:10.1039%2Fc7tc02263h/rivista:JOURNAL OF MATERIALS CHEMISTRY C/anno:2017/pagina_da:9886/pagina_a:9897/intervallo_pagine:9886–9897/volume:5
Kang, M H, Qiu, G, Chen, B, Jouvray, A, Teo, K B K, Teo, K B K, Cepek, C, Wu, L, Kim, J, Milne, W I & Cole, M 2017, ' Transport in polymer-supported chemically-doped CVD graphene ', Journal of Materials Chemistry C, vol. 5, no. 38, pp. 9886-9897 . https://doi.org/10.1039/C7TC02263H
info:cnr-pdr/source/autori:Kang M.H.; Qiu G.; Chen B.; Jouvray A.; Teo K.B.K.; Cepek C.; Wu L.; Kim J.; Milne W.I.; Cole M.T./titolo:Transport in polymer-supported chemically-doped CVD graphene/doi:10.1039%2Fc7tc02263h/rivista:JOURNAL OF MATERIALS CHEMISTRY C/anno:2017/pagina_da:9886/pagina_a:9897/intervallo_pagine:9886–9897/volume:5
Kang, M H, Qiu, G, Chen, B, Jouvray, A, Teo, K B K, Teo, K B K, Cepek, C, Wu, L, Kim, J, Milne, W I & Cole, M 2017, ' Transport in polymer-supported chemically-doped CVD graphene ', Journal of Materials Chemistry C, vol. 5, no. 38, pp. 9886-9897 . https://doi.org/10.1039/C7TC02263H
In this study we report on the electron transport in flexible-transparent polymer supported chemically doped chemical vapour deposited (CVD) graphene. We investigate the modified carrier transport following doping with various metal chlorides. An inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27e47a8e079adf92448d349812d434aa
https://publications.cnr.it/doc/383695
https://publications.cnr.it/doc/383695
Autor:
Clifford McAleese, Lars Buß, Leonardo Martini, Stiven Forti, Kenneth B. K. Teo, Ben R. Conran, Patrick Rebsdorf Whelan, Abhay Shivayogimath, I. Aliaj, Bjarke Sørensen Jessen, Camilla Coletti, Filippo Fabbri, J. I. Flege, Neeraj Mishra, Stefano Roddaro, Peter Bøggild, Jens Falta
Publikováno v:
Small (Weinh., Print) 15 (2019). doi:10.1002/smll.201904906
info:cnr-pdr/source/autori:Mishra N.; Forti S.; Fabbri F.; Martini L.; McAleese C.; Conran B.R.; Whelan P.R.; Shivayogimath A.; Jessen B.S.; Buss L.; Falta J.; Aliaj I.; Roddaro S.; Flege J.I.; Boggild P.; Teo K.B.K.; Coletti C./titolo:Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene/doi:10.1002%2Fsmll.201904906/rivista:Small (Weinh., Print)/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:15
Small
Mishra, N, Forti, S, Fabbri, F, Martini, L, McAleese, C, Conran, B R, Whelan, P R, Shivayogimath, A, Jessen, B S, Buß, L, Falta, J, Aliaj, I, Roddaro, S, Flege, J I, Bøggild, P, Teo, K B K & Coletti, C 2019, ' Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene ', Small, vol. 15, no. 50, e1904906 . https://doi.org/10.1002/smll.201904906
info:cnr-pdr/source/autori:Mishra N.; Forti S.; Fabbri F.; Martini L.; McAleese C.; Conran B.R.; Whelan P.R.; Shivayogimath A.; Jessen B.S.; Buss L.; Falta J.; Aliaj I.; Roddaro S.; Flege J.I.; Boggild P.; Teo K.B.K.; Coletti C./titolo:Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene/doi:10.1002%2Fsmll.201904906/rivista:Small (Weinh., Print)/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:15
Small
Mishra, N, Forti, S, Fabbri, F, Martini, L, McAleese, C, Conran, B R, Whelan, P R, Shivayogimath, A, Jessen, B S, Buß, L, Falta, J, Aliaj, I, Roddaro, S, Flege, J I, Bøggild, P, Teo, K B K & Coletti, C 2019, ' Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene ', Small, vol. 15, no. 50, e1904906 . https://doi.org/10.1002/smll.201904906
The adoption of graphene in electronics, optoelectronics, and photonics is hindered by the difficulty in obtaining high-quality material on technologically relevant substrates, over wafer-scale sizes, and with metal contamination levels compatible wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9449d8d3205084a4ea2370eba0ee2921
https://doi.org/10.1002/smll.201904906
https://doi.org/10.1002/smll.201904906
Autor:
Seul Ki Youn, Hyung Gyu Park, John Robertson, Baskar Pagadala Gopi, Christos E. Frouzakis, Kenneth B. K. Teo
Publikováno v:
Carbon. 54:343-352
We present temperature gradient chemical vapor deposition (TG CVD) for producing vertically aligned (VA-) carbon nanotubes (CNTs). Independent heaters on the gas inlet and catalyst substrate sides of a cold-wall, vertical CVD reactor can modulate the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e5b85dc050163cd896c171e14f41ed2
https://doi.org/10.1016/j.carbon.2012.11.046
https://doi.org/10.1016/j.carbon.2012.11.046