Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures

Autor: Chen, Ze Yu, Liu, Yafei, Cheng, Qian Yu, Hu, Shanshan, Raghothamachar, Balaji, Ghandi, Reza, Kennerly, Stacey, Carlson, Charles, Steski, Dannie, Dudley, Michael

Publikováno v: Diffusion and Defect Data Part A: Defect and Diffusion Forum; August 2024, Vol. 434 Issue: 1 p87-92, 6p

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Characterization of 4 kV Charge-Balanced SiC MOSFETs

Autor: Knoll, Jack, Shawky, Mina, Yen, Sheng-Hung, Eshera, Ibrahim, Dimarino, Christina, Ghandi, Reza, Kennerly, Stacey, Buttay, Cyril

Publikováno v: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
2021 IEEE Applied Power Electronics Conference and Exposition (APEC), Jun 2021, Phoenix, AZ, United States

International audience; This work demonstrates a novel charge-balanced (CB) silicon carbide (SiC) MOSFET that boasts a specific on-resistance of 10 mΩ•cm 2 at 4 kV breakdown voltage, surpassing the 1-D SiC unipolar limit. This is achieved through

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c412e7b25c5c1f12a02178de7f21e3b9
https://hal.archives-ouvertes.fr/hal-03360838/document

Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes

Autor: Ghandi, Reza, Hitchcock, Collin, Kennerly, Stacey

Publikováno v: Materials Science Forum; May 2022, Vol. 1062 Issue: 1 p477-481, 5p

Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms

Autor: Chen, Ze Yu, Peng, Hong Yu, Liu, Ya Fei, Cheng, Qian Yu, Hu, Shan Shan, Raghothamachar, Balaji, Dudley, Michael, Ghandi, Reza, Kennerly, Stacey, Thieberger, Peter

Publikováno v: Materials Science Forum; May 2022, Vol. 1062 Issue: 1 p361-365, 5p