Výsledky vyhledávání - "Kennedy, V. J."

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Quantitative study of molecular N_2 trapped in disordered GaN:O films

Autor: Ruck, B. J., Koo, A., Lanke, U. D., Budde, F., Granville, S., Trodahl, H. J., Bittar, A., Metson, J. B., Kennedy, V. J., Markwitz, A.

The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecula

Externí odkaz: http://arxiv.org/abs/cond-mat/0408174

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Akademický článek

Magnetic and optical properties of the InCrN system.

Autor: Anderson, P. A., Kinsey, R. J., Durbin, S. M., Markwitz, A., Kennedy, V. J., Asadov, A., Gao, W., Reeves, R. J.

Publikováno v: Journal of Applied Physics; 8/15/2005, Vol. 98 Issue 4, p043903, 5p, 2 Black and White Photographs, 7 Graphs

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Akademický článek

HEAVY METAL POLLUTION STUDIES OF SUSPENDED SEDIMENTS IN WAIWHETU STREAM WATER BY PIXE.

Autor: Kennedy, V. J., Markwitz, A.

Publikováno v: International Journal of PIXE. 2002, Vol. 12 Issue 3/4, p189. 9p.

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Minority-spin band parameters in a NiMnSb thin film determined by spectral conductivity

Autor: Grigorescu, C. E. A., Trodahl, H. J., Strickland, N. M., Bittar, A., Manea, S. A., Giapintzakis, John, Monnereau, O., Notonier, R., Kennedy, V. J.

Publikováno v: Journal of Applied Physics

NiMnSb is expected to be a ferromagnetic half metal, an expectation that is based in part on band structure calculations. Here we report optical conductivity studies of the band structure for a film prepared by pulsed laser deposition onto a Si subst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ac1ce173804b697d29694b5b15452ab
http://gnosis.library.ucy.ac.cy/handle/7/48377

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Depth profiling of light elements in PAMBE-grown GaN and helium-implanted titanium with heavy ion time-of-flight elastic recoil detection

Autor: Markwitz, A., Kennedy, V. J., Durbin, S. M., Johnson, P. B., Mücklich, A., Dytlewski, N.

Publikováno v: Surface and Interface Analysis 36 (2004) 317-322

The heavy ion time-of-flight elastic recoil detection analysis (HI-ERDA) technique was used to investigate the possibility of measuring near-surface elemental depth profiles of light and mid-Z elements in thin films of plasma-assisted molecular beam

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::5d3a9bc77c5c8648accc49f74ead09ea
https://www.hzdr.de/publications/Publ-6754-1

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