Zobrazeno 1 - 10
of 174
pro vyhledávání: '"Kenji Shiojima"'
Publikováno v:
Journal of the Society of Materials Science, Japan. 71:819-823
Publikováno v:
Materials Science in Semiconductor Processing. 162:107536
Publikováno v:
Materials Science in Semiconductor Processing. 158:107386
Autor:
Kenji Shiojima
Publikováno v:
Journal of the Society of Materials Science, Japan. 69:837-842
Autor:
Kenji Shiojima
Publikováno v:
Journal of the Society of Materials Science, Japan. 69:717-720
Autor:
Hiroki Imabayashi, Yuto Yasui, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Mishima, Kenji Shiojima
Publikováno v:
Japanese Journal of Applied Physics. 62:SA1012
We applied scanning internal photoemission microscopy (SIPM) to clarify the electrical characteristics on the electrode periphery of Ni/n-GaN Schottky contacts. Two types of Schottky contacts with different electrode formation methods were prepared.
Publikováno v:
Japanese Journal of Applied Physics. 61:086506
We report basic diode characteristics and uniformity of Schottky contacts between printed Ni electrode and n-GaN on GaN epitaxial wafers annealed at 400, 500, and 600 °C. The Schottky barrier height of the samples annealed at 400 °C and 500 °C wer
Publikováno v:
Thin Solid Films. 685:17-25
We used herein scanning internal photoemission microscopy (SIPM) that can map electrical characteristics and applied it to characterize the thermal stability of three kinds of α-Ga2O3 Schottky barrier diodes (SBDs). Good rectification characteristic
Publikováno v:
Semiconductor Science and Technology.
Autor:
Kenji Shiojima, Ryo Matsuda, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Mishima
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1059
We present the experimental results on the mapping characterization of n-type GaN Schottky contacts with selective contactless photoelectrochemical (CL-PEC) etching by using scanning internal photoemission microscopy (SIPM). The CL-PEC etching was pe