Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Kenji Ohtoshi"'
Autor:
Hirokazu Yamada, Tomohiro Iijima, Shinsuke Nishimura, Kenji Ohtoshi, Satoshi Nakahashi, Tetsurou Nishiyama, Ryo Iikubo, Osamu Kawami, Takao Tamura, Hirohiko Honda, Syoji Mori, Takahiro Honbu, Tsuyoshi Yamashita
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020.
The high-throughput EBM-mask writer, EBM-8000P has been developed for mature node mask market. The EBM-8000P inherits basic architectures from the previous EBM-8000 system, i.e. electron optics with 50kV acceleration voltage, 400A/cm2 current density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed0a098d91925392d18e7a1b629e1e50
https://doi.org/10.1117/12.2552447
https://doi.org/10.1117/12.2552447
Publikováno v:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b07f85aa3627e3a7c35abce439d49786
https://doi.org/10.1117/12.2502599
https://doi.org/10.1117/12.2502599
Publikováno v:
Proceedings of SPIE; 1/21/2019, Vol. 10958, p1-5, 5p
Publikováno v:
Proceedings of SPIE; 8/23/2018, Vol. 10807, p1-7, 7p
Autor:
Takahito Nakayama, Noriaki Nakayamada, Kenji Ohtoshi, Victor Katsap, Rodney A. Kendall, Hidekazu Takekoshi, Seiichi Nakazawa, Hiroyoshi Ando, Kenichi Saito, Hideo Inoue, Tomohiro Iijima, Akihito Anpo, Yoshinori Kojima, Hirohito Anze, Rieko Nishimura, Takashi Kamikubo, Steven D. Golladay, Jun Yashima
Publikováno v:
SPIE Proceedings.
Many lithography candidates, such as ArF immersion lithography with double-patterning/double-exposure techniques, EUV lithography and nano-imprint lithography, show promising capability for 22-nm half-pitch generation lithography. ArF immersion litho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d42d9388e3cf893d9c60ad2918c5138
https://doi.org/10.1117/12.2065551
https://doi.org/10.1117/12.2065551
Publikováno v:
Proceedings of SPIE; 10/10/2017, Vol. 10446, p1-5, 5p
Publikováno v:
Journal of Micro/Nanolithography, MEMS & MOEMS; Jul-Sep2018, Vol. 17 Issue 3, p1-6, 6p
Autor:
Shusuke Yoshitake, Takashi Kamikubo, Noriaki Nakayamada, Kiyoshi Hattori, Hiroyoshi Ando, Tomohiro Iijima, Kenji Ohtoshi, Kenichi Saito, Ryoichi Yoshikawa, Shuichi Tamamushi, Rikio Tomiyoshi, Hitoshi Higurashi, Yoshiaki Hattori, Seiichi Tsuchiya, Masayuki Katoh, Kouichi Suzuki, Yuichi Tachikawa, Munehiro Ogasawara, Victor Katsap, Steven Golladay, Rodney Kendall
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9777a6a39e4358d89b93588ab20219c
https://doi.org/10.1117/12.898850
https://doi.org/10.1117/12.898850
Autor:
Noriaki Nakayamada, Takashi Kamikubo, Ishimura Takiji, Rieko Nishimura, Soichiro Mitsui, Yoshitada Gomi, Seiichi Tsuchiya, Hitoshi Higurashi, Hitoshi Sunaoshi, Hideo Inoue, Hideki Matsui, Kenji Ohtoshi, Shuichi Tamamushi, Kiminobu Akeno, Susumu Oogi, Akinori Mine, Yuichi Tachikawa
Publikováno v:
SPIE Proceedings.
Optical lithography is facing resolution limit. To overcome this issue, highly complicated patterns with high data volume are being adopted for optical mask fabrications. With this background, new electron beam mask writing system, EBM- 7000 is devel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef6fd0a63c8cfc505bc1f2ad76468605
https://doi.org/10.1117/12.833462
https://doi.org/10.1117/12.833462
Autor:
Tomohiro Iijima, Kenji Ohtoshi, Shinji Sakamoto, Kiyoshi Hattori, Rieko Nishimura, Hitoshi Higurashi, Noriaki Nakayamada, Takehiko Katsumata, Hirohito Anze, Syuuichiro Fukutome, Yusuke Sakai, Jun Yashima, Seiji Wake, Kenichi Saito, Nobuo Miyamoto, Rodney A. Kendall, Shuichi Tamamushi, Shigehiro Hara
Publikováno v:
SPIE Proceedings.
In order to comply with the demanding technology requirements for 45 nm half pitch (HP) node (32 nm technology node), Nuflare Technology Inc. (NFT) has developed Electron-beam mask writing equipment, EBM-6000, with increased current density (70A/cm 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3563077eeeb6663365172545e2869a0b
https://doi.org/10.1117/12.728917
https://doi.org/10.1117/12.728917