Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Kenji Hinode"'
Publikováno v:
Journal of Applied Physics. 94:2572-2578
The barrier mechanism against copper-ion diffusion in silicon-oxide films deposited by plasma-enhanced chemical vapor deposition (PECVD) using trimethoxysilane (TMS) and nitrous oxide (N2O) chemistry (PE-TMS oxide) was studied. It was found that the
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1653-1658
The room-temperature reaction between copper (Cu) and silicon (Si) was investigated. The areas of an Si substrate covered with very thin or island-like Cu oxidized formed thick (>100 nm) oxide (SiO2). The areas covered with thick and nonisland-like C
Autor:
Shinichiro Kimura, Yutaka Okuyama, Eishi Ebe, Kenji Hinode, Eiji Takeda, Kazuyoshi Torii, Eiichi Murakami
Publikováno v:
Microelectronics Reliability. 42:493-506
Reliability issues regarding scaled silicon devices are reviewed from the viewpoint of the 100-nm technology node. Topics covered include hot carrier degradation, negative bias-temperature instability, boron penetration, interface properties of a hig
Publikováno v:
IEEE Transactions on Electron Devices. 48:1340-1345
Time-dependent dielectric breakdown (TDDB) between Cu interconnects is investigated. TDDB lifetime strongly depends on the surface condition of the Cu interconnect and surrounding pTEOS. A NH/sub 3/-plasma treatment prior to cap-pSiN deposition on Cu
Autor:
Kenji Hinode
Publikováno v:
Journal of Japan Institute of Light Metals. 48:635-640
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:2017-2022
The oxidation behavior of titanium–nitride (TiN) films, which were formed at different biasing voltages, was investigated. The four film properties investigated (oxygen concentration, electrical resistivity, density, and stress) changed monotonical
Publikováno v:
Journal of Applied Physics. 81:7746-7750
The use of Cu in ultralarge scale integrated (ULSI) conductors has resulted in the need to prevent Cu diffusion. We evaluated the passivation effect of plasma-enhanced chemical-vapor-deposited silicon nitride (PECVD-SiN) using secondary ion mass spec
Autor:
Kenji Hinode
Publikováno v:
Materia Japan. 36:571-576
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2570-2576
We studied whisker formation on aluminum (Al) films on silicon substrates during heat treatments, and investigated the influence of the aluminum film properties and the conditions of the heat treatment on whisker nucleation and growth. The whiskers,
Publikováno v:
Journal of Applied Physics. 78:6534-6538
Ten kinds of Al‐based layered metallizations were fabricated and investigated to find out how a refractory metal underlayer affects the crystallographic characteristics of an Al layer and, in consequence, the electromigration resistance of the meta