Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Kenji Funato"'
Autor:
T. Tanaka, Makoto Ohta, Shu Goto, Yoshifumi Yabuki, Y. Ohizumi, Masao Ikeda, Shigetaka Tomiya, Yukio Hoshina, Kenji Funato
Publikováno v:
physica status solidi (a). 204:2068-2072
We successfully developed high-power and long-lived pure blue laser diodes (LDs) having an emission wavelength of 440-450 nm. The pure-blue LDs were grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates. The dislocation density wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a449ccdb70639c31e20d4e3656f09786
https://doi.org/10.1002/pssa.200674748
https://doi.org/10.1002/pssa.200674748
Autor:
K. Kobayashi, Kenji Funato, Takeharu Asano, Tomonori Hino, Shigetaka Tomiya, Hiroshi Nakajima, Takao Miyajima, Masao Ikeda, Satoru Kijima
Publikováno v:
physica status solidi (a). 188:69-72
We have investigated dislocations in GaN-based laser diodes (LDs) on epitaxial lateral overgrown (ELO) GaN layers using transmission electron microscopy and cathodoluminescence microscopy and found a correlation between dislocations and device reliab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b6b3d749208c213aaae46c6fe43d23
https://doi.org/10.1002/1521-396x(200111)188:1<69::aid-pssa69>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<69::aid-pssa69>3.0.co
Autor:
Takao Miyajima, Kenji Funato, Takeharu Asano, Shiro Uchida, Toshimasa Kobayashi, Satoru Kijima, Katsunori Yanashima, Tomonori Hino, Motonobu Takeya, Tsuyoshi Tojyo, Masao Ikeda, Tsunenori Asatsuma, Shigetaka Tomiya
Publikováno v:
Journal of Physics: Condensed Matter. 13:7099-7114
We report our recent progress on GaN-based high-power laser diodes (LDs), which will be applied as a light source in high-density optical storage systems. We have developed raised-pressure metal-organic chemical vapour deposition (RP-MOCVD), which ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdb1ab26d7bb389dbab79abb7692d5a5
https://doi.org/10.1088/0953-8984/13/32/315
https://doi.org/10.1088/0953-8984/13/32/315
Autor:
Hiroshi Yoshida, Katsunori Yanashima, Masao Ikeda, Hiroshi Nakajima, Masafumi Ozawa, Tsuyoshi Tojyo, Takao Miyajima, Satoru Kijima, Tomonori Hino, Toshimasa Kobayashi, Shigeki Hashimoto, Kenji Funato, Takeharu Asano, Shiro Uchida, Takashi Yamaguchi, Shigetaka Tomiya, Tsunenori Asatsuma
Publikováno v:
Materials Science and Engineering: B. 82:248-252
We report our recent progress on GaN-based laser diodes (LDs) which will be applied as a light source in high-density optical storage systems. Recently we achieved a lifetime of more than 500 hours under continuous-wave operation with a constant powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::322c63b9bf2809154301c7fcd94f8b9f
https://doi.org/10.1016/s0921-5107(00)00758-3
https://doi.org/10.1016/s0921-5107(00)00758-3
Autor:
Hiroji Kawai, Satoshi Tomioka, Kaori Naganuma, Kenji Funato, Toshimasa Kobayashi, Tsunenori Asatsuma, Etsuo Morita, Fumihiko Nakamura, Shigeki Hashimoto, Masao Ikeda, Katsunori Yanashima, Takao Miyajima
Publikováno v:
Journal of Crystal Growth. :841-845
The well-number dependence of the optical pumping threshold power for stimulated emission of GaInN multiple quantum-well (MQW) laser structures was investigated. The pumping threshold power for a three GaInN MQW sample was found to be as low as 33 kW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4c149d2cd29aa68a464728278c4dd82
https://doi.org/10.1016/s0022-0248(98)00306-6
https://doi.org/10.1016/s0022-0248(98)00306-6
Publikováno v:
Journal of Crystal Growth. 156:373-376
We have epitaxially grown ZnMgTe ternary alloys, whose Mg content is between 0% and 50%, on (100) GaAs substrates by metalorganic chemical vapor deposition. The band-gap energy estimated from the emission wavelength at room temperature can be varied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ed75cc7ef82b1c4be77c93c19482e4
https://doi.org/10.1016/0022-0248(95)00244-8
https://doi.org/10.1016/0022-0248(95)00244-8
Publikováno v:
Journal of Crystal Growth. 145:537-540
Room temperature blue laser action in an optically pumped metalorganic chemical vapor deposition (MOCVD)-grown ZnSe/ZnMgSSe double heterostructure is demonstrated. In the atmospheric pressure metalorganic chemical vapor deposition process, dimethylzi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24bda059ff73c027b741c94f57382eb8
https://doi.org/10.1016/0022-0248(94)91103-7
https://doi.org/10.1016/0022-0248(94)91103-7
Publikováno v:
Physica B: Condensed Matter. 201:380-383
Measurements of current-voltage characteristics of GaSb/InAs heterostructure devices were performed under pulsed high magnetic fields up to 40 T. The critical voltage for the negative differential conductivity was found to change under strong magneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aecad5a341c4d5e3d6acd91c94b48aa
https://doi.org/10.1016/0921-4526(94)91119-3
https://doi.org/10.1016/0921-4526(94)91119-3
Publikováno v:
Physica B: Condensed Matter. 184:259-262
Current vs voltage characteristics of InAs/GaSb/InAs diodes were studied in two samples with a different width of GaSb layers under pulsed high magnetic fields up to 40 T. A current peak of negative differential conductivity was found to decrease wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30fa6642b556620a05dec543a58bbf1e
https://doi.org/10.1016/0921-4526(93)90362-a
https://doi.org/10.1016/0921-4526(93)90362-a
Publikováno v:
Journal of Applied Physics. 73:1-7
A quantum interference transistor that can be fabricated by available technology and can operate at room temperature is proposed. This device uses the phase interference effect of a vacuum electron that is not influenced by thermal fluctuations, in c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69a99edd2e6f4434579961d8cd679a3
https://doi.org/10.1063/1.353883
https://doi.org/10.1063/1.353883