Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Kenichiro Terui"'
Publikováno v:
Materials Science Forum. :631-634
The reaction behavior and growth kinetic of reaction layer were investigated in the Ni contact to n-type 6H-SiC. Annealing was performed at temperature in the range between 800 and 1000 °C for 1 to 240 minutes in Ar atmosphere. The interface reactio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deb651c6051e83e6f40c370acd46d3af
https://doi.org/10.4028/www.scientific.net/msf.600-603.631
https://doi.org/10.4028/www.scientific.net/msf.600-603.631
