Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kenichiro Terui"'
Publikováno v:
Materials Science Forum. :631-634
The reaction behavior and growth kinetic of reaction layer were investigated in the Ni contact to n-type 6H-SiC. Annealing was performed at temperature in the range between 800 and 1000 °C for 1 to 240 minutes in Ar atmosphere. The interface reactio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deb651c6051e83e6f40c370acd46d3af
https://doi.org/10.4028/www.scientific.net/msf.600-603.631
https://doi.org/10.4028/www.scientific.net/msf.600-603.631
Autor:
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda, Shin-ichi Nishizawa
Selected, peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu, Japan, October 14 – 19, 2007
