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pro vyhledávání: '"Kenichi Suematsu"'
Autor:
Kenji Terao, Hidehiro Watanabe, Masahiro Hatakeyama, Tsuyoshi Amano, Ryoichi Hirano, Takeshi Murakami, Susumu Iida, Kenichi Suematsu
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is a promising technique for 1X nm half-pitch (hp) generation lithography. The inspection of patterned EUVL masks is one of the main issues that must be addressed during mask fabrication for manufacture of devic
Autor:
Kenichi Suematsu, Masahiro Hatakeyama, Hidehiro Watanabe, Tsuyoshi Amano, Susumu Iida, Kenji Terao, Takeshi Murakami, Ryoichi Hirano
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 (“Model EBEYE” is an EBARA’s model code) , and the resulting system shows promise for application to half-pitch (hp) 16-
Autor:
Kenji Terao, Hidehiro Watanabe, Susumu Iida, Ryoichi Hirano, Masahiro Hatakeyama, Tsuyoshi Amano, Takeshi Murakami, Kenichi Suematsu, Shoji Yoshikawa
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrat
Autor:
Ryoichi Hirano, Masahiro Hatakeyama, Shoji Yoshikawa, Kenji Terao, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Kenichi Suematsu, Takeshi Murakami
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:021008
Extreme ultraviolet lithography (EUVL) patterned mask defect detection is one of the major issues to overcome for realization of EUVL-based device fabrication. We have designed projection electron microscope (PEM) optics that have been integrated int