Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Kenichi Sano"'
Autor:
Denis Shamiryan, Muhammad Mustafa Hussain, Kenichi Sano, Karen A. Reinhardt, Vasile Paraschiv
Publikováno v:
Handbook of Cleaning in Semiconductor Manufacturing: Fundamental and Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67da1caa37cef074de8e2b43f3726a27
https://doi.org/10.1002/9781118071748.ch7
https://doi.org/10.1002/9781118071748.ch7
Autor:
Eddy Simoen, Roger Loo, Andriy Hikavyy, Mireia Bargallo Gonzalez, Frederik Leys, W. Vanherle, Matty Caymax, Kenichi Sano, Antoine Pacco, Peter Verheyen, Brecht De Vos, Masayuki Wada
Publikováno v:
Solid State Phenomena. :177-180
Several device concepts have been further evaluated after the successful implementation of epitaxial Si, SiGe and/or Si:C layers. Most of the next device generations will put limitations on the thermal budget of the deposition processes without makin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::564f62cf1ec91b8600f920f72708f79c
https://doi.org/10.4028/www.scientific.net/ssp.145-146.177
https://doi.org/10.4028/www.scientific.net/ssp.145-146.177
Autor:
Rita Vos, Isabelle Ferain, Nadine Collaert, James Snow, L.H.A. Leunissens, Atsuro Eitoku, Paul Mertens, Kenichi Sano, Sylvain Garaud, Masayuki Wada
Publikováno v:
Solid State Phenomena. :215-218
High-k gate dielectrics (HK), such as HfO2 or HfSiON, are being considered as the gate dielectric option for the 45nm node and beyond. In order to alleviate the Fermi-level pinning issue and to enhance the CET (Capacitive Effective Thickness) by gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe52adbf421e0342c544460482d17fdc
https://doi.org/10.4028/www.scientific.net/ssp.145-146.215
https://doi.org/10.4028/www.scientific.net/ssp.145-146.215
Autor:
Roger Loo, Katsuhiko Miya, Paul Mertens, Frederik Leys, Andriy Hikavyy, Kenichi Sano, Masayuki Wada, Akira Izumi, James Snow, Atsuro Eitoku
Publikováno v:
Solid State Phenomena. :173-176
Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa9dcef01028246a38710a7265edfd6
https://doi.org/10.4028/www.scientific.net/ssp.145-146.173
https://doi.org/10.4028/www.scientific.net/ssp.145-146.173
Autor:
Atsuro Eitoku, Paul Mertens, L.H.A. Leunissens, James Snow, Masayuki Wada, Rita Vos, Kenichi Sano
Publikováno v:
Solid State Phenomena. :285-288
The introduction of metal gates and high-k dielectrics in FEOL and porous ULK dielectrics in BEOL presents severe issues [1] and leads to the requirement of new chemistries and processes. A major challenge in cleaning is the removal of photoresist (P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b98b319e709eb7e8227d9287a8fbabb9
https://doi.org/10.4028/www.scientific.net/ssp.145-146.285
https://doi.org/10.4028/www.scientific.net/ssp.145-146.285
Autor:
Akira Izumi, Roger Loo, James Snow, Frederik Leys, Atsuro Eitoku, Kenichi Sano, Paul Mertens, Gabriela Dilliway
Publikováno v:
Solid State Phenomena. 134:243-246
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95351b15d5097ac3be570c8550e3409f
https://doi.org/10.4028/www.scientific.net/ssp.134.243
https://doi.org/10.4028/www.scientific.net/ssp.134.243
Autor:
Kai Dong Xu, James Snow, J. Veltens, Chris Vinckier, Paul Mertens, Karine Kenis, Atsuro Eitoku, Guy Vereecke, Kenichi Sano, Sophia Arnauts
Publikováno v:
Solid State Phenomena. 134:155-158
With the continuous shrinkage of critical sizes in semiconductor manufacturing, nano-particles smaller than 100-nm are becoming a potential threat to devices in chips. Storage of wafers contaminated during process steps often results in a decrease of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87b7a81135a7ac5c60cb6fd943e6077b
https://doi.org/10.4028/www.scientific.net/ssp.134.155
https://doi.org/10.4028/www.scientific.net/ssp.134.155
Autor:
Kenichi Sano, James Snow, T. Veltens, Guy Vereecke, Atsuro Eitoku, Geert Doumen, Paul Mertens, Kurt Wostyn, Wim Fyen
Publikováno v:
Solid State Phenomena. 134:193-196
Cleaning of nano-particles is becoming a major challenge in semiconductor manufacturing as efficient particle removal must be achieved without substrate loss and without damage to fragile structures. In this work cleaning performance and structural d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1903f9e64c28bf9ada5c7ec00ac4ed72
https://doi.org/10.4028/www.scientific.net/ssp.134.193
https://doi.org/10.4028/www.scientific.net/ssp.134.193
Autor:
Olivier Richard, Atsuro Eitoku, Akira Izumi, Thierry Conard, S. Kubicek, R. Singanamalla, Kenichi Sano, James Snow, Rita Vos, Paul Mertens, Laura Nyns
Publikováno v:
Solid State Phenomena. 134:53-56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0ca7f951dc69e366d80decc645b7ec6
https://doi.org/10.4028/www.scientific.net/ssp.134.53
https://doi.org/10.4028/www.scientific.net/ssp.134.53
Autor:
Yoshimichi Kozuka, Takuya Ohkubo, Yoshio Takeuchi, Kenichi Sano, Kota Watanabe, Akiko Jozuka, Naomi S. Hachiya, Kiyotoshi Kaneko, Yuji Sakasegawa, Makiko Yamada
Publikováno v:
Neuroscience Letters. 374:98-103
Recent studies suggest that the disease isoform of prion protein (PrPSc) is non-neurotoxic in the absence of cellular isoform of prion protein (PrPC), indicating that PrPC may participate directly in the neurodegenerative damage by itself. Meanwhile,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66620bfbbecb3a3bbdfc44f043cfd54d
https://doi.org/10.1016/j.neulet.2004.10.044
https://doi.org/10.1016/j.neulet.2004.10.044