Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Kenichi Iguchi"'
Autor:
Eiji Higurashi, Haruo Nakazawa, Fengwen Mu, Takehito Shimatsu, Yinghui Wang, Miyuki Uomoto, Yoshikazu Takahashi, Tadatomo Suga, Kenichi Iguchi
Publikováno v:
Applied Surface Science. 465:591-595
In this study, a de-bondable wafer bonding method for silicon carbide (SiC) that can sustain rapid thermal annealing (RTA) at ∼1273 K has been realized. Two SiC wafers were bonded via an intermediate nickel (Ni) nano-film at room temperature withou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd044ba25f58e04df89be8eaebd15fbe
https://doi.org/10.1016/j.apsusc.2018.09.050
https://doi.org/10.1016/j.apsusc.2018.09.050
Publikováno v:
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
A SiC-SiC temporary bonding compatible with rapid thermal annealing at $\sim 1000^{\circ } \mathrm{C}$ has been realized. Two SiC wafers were bonded at room temperature via an intermediate Ni nano-film. After the rapid thermal annealing, the bonding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1265eea91883e3d74b1d2c4c59bc3a13
https://doi.org/10.23919/ltb-3d.2019.8735291
https://doi.org/10.23919/ltb-3d.2019.8735291
Publikováno v:
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
In this paper, wafer bonding of SiC accomplished at room temperature would be introduced. Homo/heterogeneous SiC bonding using three kinds of SAB methods (standard SAB, modified SAB with Si-containing Ar-beam, and modified SAB with Si sputtering laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b47c254bef567750ed17ab36e65bdc4
https://doi.org/10.23919/ltb-3d.2019.8735211
https://doi.org/10.23919/ltb-3d.2019.8735211
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P451-P456
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ddf28660a935d9918192e77ed17022d
https://doi.org/10.1149/2.0011609jss
https://doi.org/10.1149/2.0011609jss
Autor:
Masahisa Fujino, Fengwen Mu, Yoshikazu Takahashi, Haruo Nakazawa, Tadatomo Suga, Kenichi Iguchi
Publikováno v:
2017 18th International Conference on Electronic Packaging Technology (ICEPT).
This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and compos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9225bc06ef66b3b5f750e2b0281cc044
https://doi.org/10.1109/icept.2017.8046538
https://doi.org/10.1109/icept.2017.8046538
Autor:
Fengwen Mu, Yoshikazu Takahashi, Masahisa Fujino, Tadatomo Suga, Kenichi Iguchi, Haruo Nakazawa
Publikováno v:
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a287d4496f06bea98e77f5e8989b299
https://doi.org/10.23919/ltb-3d.2017.7947399
https://doi.org/10.23919/ltb-3d.2017.7947399
Autor:
Haruo Nakazawa, Yoshikazu Takahashi, Fengwen Mu, Masahisa Fujino, Kenichi Iguchi, Tadatomo Suga
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03757a65f7085fec410fa10ffedad3bd
https://doi.org/10.7567/ssdm.2015.e-2-3
https://doi.org/10.7567/ssdm.2015.e-2-3
Autor:
Yoshikazu Takahashi, Masahisa Fujino, Fengwen Mu, Tadatomo Suga, Haruo Nakazawa, Kenichi Iguchi
Publikováno v:
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was dem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d779079b3da8a4310e8e233ec60e721
https://doi.org/10.1109/ltb-3d.2014.6886194
https://doi.org/10.1109/ltb-3d.2014.6886194
Autor:
Masahisa Fujino, Fengwen Mu, Haruo Nakazawa, Tadatomo Suga, Kenichi Iguchi, Yoshikazu Takahashi
Publikováno v:
2014 International Conference on Electronics Packaging (ICEP).
3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::848f7f56fb862c159f3aca25a05ecb8c
https://doi.org/10.1109/icep.2014.6826707
https://doi.org/10.1109/icep.2014.6826707
Autor:
Kenichi Iguchi, Masahisa Fujino, Fengwen Mu, Yoshikazu Takahashi, Tadatomo Suga, Haruo Nakazawa
Publikováno v:
ECS Meeting Abstracts. :2074-2074
The efficiency improvement of power devices is of significance because the energy saving and prevention of global warming are urgent issues. However, it is difficult to realize further improvement by using the conventional silicon (Si) because of its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c5d72774232b1ccaf6949f64caea3fc
https://doi.org/10.1149/ma2016-02/32/2074
https://doi.org/10.1149/ma2016-02/32/2074