Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Ken-Ichi Goto"'
Autor:
Lee-Chung Lu, Chih-Sheng Chang, Meikei Ieong, Chih-Ping Chao, Ken-Ichi Goto, Carlos H. Diaz, Mi-Chang Chang
Publikováno v:
IEEE Transactions on Electron Devices. 55:84-95
CMOS-technology scaling has moved to a power-constrained condition regardless of the application segments. Power management in advanced CMOS technology drives the need to conciliate scaling-driven fundamental material limitations with product and app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::040c293168c593703c4790082c3324d5
https://doi.org/10.1109/ted.2007.911348
https://doi.org/10.1109/ted.2007.911348
Autor:
Chenhsin Lien, W. Po-Nien Chen, Yi-Ming Sheu, Pin Su, D. Yuan-Shun Chao, J. S. Wang, Chun-Hsing Shih, Ken-Ichi Goto
Publikováno v:
IEEE Electron Device Letters. 28:1040-1043
A new mobility model, together with its extraction method for manufacturing strained-Si MOSFETs, is presented. An accurate mobility extraction is obtained from the linear drain current by excluding the parasitic source/drain resistance and the parasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a6ad11dc2b5a46fa326e0a994cea102
https://doi.org/10.1109/led.2007.908477
https://doi.org/10.1109/led.2007.908477
Publikováno v:
IEEE Electron Device Letters. 29:768-770
This letter provides an experimental assessment of Coulomb scattering mobility for advanced short-channel strained devices. By accurate mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on Coulom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b251deda4ddc3ef0415fd127d9a7360a
https://doi.org/10.1109/led.2008.2000909
https://doi.org/10.1109/led.2008.2000909
Autor:
Ken-ichi Goto
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 81:26-33
Ti, Pt, Ni, and Co salicide processes are applied to 0.1-µm CMOS devices and the problems and possibilities are discussed. Co salicide technology is an especially promising process. The mechanisms of the resistance fluctuations and junction leakage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::643b69f7feab01a39dde2d99dbdde6e8
https://doi.org/10.1002/(sici)1520-6432(199811)81:11<26::aid-ecjb4>3.0.co
https://doi.org/10.1002/(sici)1520-6432(199811)81:11<26::aid-ecjb4>3.0.co
Publikováno v:
IEEE Electron Device Letters. 23:550-552
The authors present a thermal activation perspective for direct assessment of the low voltage impact ionization in deep-submicrometer MOSFETs. A comparison of the experimentally determined activation energy and a simple theoretical model is used to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b53bed27a34296afc42c15cbb2e5fbe1
https://doi.org/10.1109/led.2002.802653
https://doi.org/10.1109/led.2002.802653
Publikováno v:
IEEE Electron Device Letters. 23:282-284
This letter reports an enhanced substrate current at high gate bias in SOI MOSFETs. A comparison between coprocessed bulk and partially depleted SOI MOSFETs is used to present the enhancement unique to SOI devices and demonstrate the underlying mecha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::865e3ecf244501397bce9843cce06b71
https://doi.org/10.1109/55.998877
https://doi.org/10.1109/55.998877
Publikováno v:
Die Makromolekulare Chemie. 194:1323-1334
Monomers containing several octadecyl groups, e.g., 2-isopropenyl-4,6-bis(octadecylamino)-1,3,5-triazine (2), 2-dioctadecylamino-4-isopropenyl-6-octadecylamino-1,3,5-triazine (3) and 2,4-bis(dioctadecylamino)-6-isopropenly-1,3,5-triazine (4) were pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a179413837983501c07e93a98670be2
https://doi.org/10.1002/macp.1993.021940507
https://doi.org/10.1002/macp.1993.021940507
Publikováno v:
Die Makromolekulare Chemie. 193:2621-2630
New isopropenyltriazines, e.g., 2-diethylamino-4-dimethylamino-6-isopropenyl-1,3,5-triazine (2a) and 2-dimethylamino-4-dioctadecylamino-6-isopropenyl-1,3,5-triazine (2b) were prepared by the alkylation reaction of 2-amino-4-dimethylamino-6-isopropyl-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e994e770479936fdaa3f7a6634af82e
https://doi.org/10.1002/macp.1992.021931011
https://doi.org/10.1002/macp.1992.021931011
Publikováno v:
Polymer Journal. 24:239-246
2-Octadecylamino-4-(N-octadecylanilino)-6-isopropenyl-1,3,5-triazine (2N18) and 2-dioctadecylamino-4-(N-octadecylanilino)-6-isopropenyl-1,3,5-triazine (3N18) were prepared from 2-amino-4-(N-octadecylanilino)-6-isopropenyl-1,3,5-triazine (N18) with oc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c2d3b74e69af20f5c05c70b7ef4eaa
https://doi.org/10.1295/polymj.24.239
https://doi.org/10.1295/polymj.24.239
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144086d67c7445cc820d601976e18652
https://doi.org/10.7567/ssdm.2008.b-6-4
https://doi.org/10.7567/ssdm.2008.b-6-4