Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ken Yuan Kan"'
Autor:
Ken-Yuan Kan, Chieh-Wen Chen, Jian-Zhang Chen, I-Chun Cheng, Fei-Hong Kuok, Ing-Song Yu, Cheng-Che Hsu
Publikováno v:
Applied Surface Science. 425:321-328
We use a dc-pulse nitrogen atmospheric-pressure plasma jet (APPJ) to calcine carbon nanotubes (CNTs) pastes that are screen-printed on carbon cloth. 30-s APPJ treatment can efficiently oxidize and vaporize the organic binders, thereby forming porous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aee0d7d8428f141579abe39f6b868682
https://doi.org/10.1016/j.apsusc.2017.06.286
https://doi.org/10.1016/j.apsusc.2017.06.286
Publikováno v:
Journal of Alloys and Compounds. 723:21-29
The effects of growth temperatures and post-annealing treatment for GaN films by plasma-assisted molecular beam epitaxy are investigated. The heteroepitaxial GaN films were deposited on 4H-SiC substrates with 4° miscutting orientation at growth temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d418225e9ed1a3007d1a4193a6c7239b
https://doi.org/10.1016/j.jallcom.2017.06.224
https://doi.org/10.1016/j.jallcom.2017.06.224
Publikováno v:
Surface and Coatings Technology. 320:548-553
GaN films were deposited by plasma-assisted molecular beam epitaxy on different substrates, i.e. Si (111), Sapphire (0001) and 4H-SiC (0001) with 4 ° of miscutting orientation. Due to the lattice mismatch between GaN films and substrates, the substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c9261146f001951116d0d215b4a988a
https://doi.org/10.1016/j.surfcoat.2016.11.019
https://doi.org/10.1016/j.surfcoat.2016.11.019
Autor:
Ken-Yuan Kan, 甘艮元
105
In this thesis, we use plasma-enhanced molecular beam epitaxy (PA-MBE) to growth GaN film on different substrates. Then, we use different instruments to characterize GaN films grown on those substrates, and we try to discuss the substrate an
In this thesis, we use plasma-enhanced molecular beam epitaxy (PA-MBE) to growth GaN film on different substrates. Then, we use different instruments to characterize GaN films grown on those substrates, and we try to discuss the substrate an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/4qj622
