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Akademický článek

Practical Experiments to Evaluate Quality Metrics of MRAM-Based Physical Unclonable Functions

Autor: Arash Nejat, Frederic Ouattara, Mohammad Mohammadinodoushan, Bertrand Cambou, Ken Mackay, Lionel Torres

Publikováno v: IEEE Access, Vol 8, Pp 176042-176049 (2020)

Process variations in the manufacturing of digital circuits can be leveraged to design Physical Unclonable Functions (PUFs) that are extensively employed in hardware-based security. Different PUFs based on Magnetic Random-Access-Memory (MRAM) devices

Externí odkaz: https://doaj.org/article/901bb18fd3dc46e8be5b6b6b6521c3f5

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Akademický článek

Practical Experiments on Fabricated TAS-MRAM Dies to Evaluate the Stochastic Behavior of Voltage-Controlled TRNGs

Autor: Frederic Ouattara, Arash Nejat, Lionel Torres, Ken Mackay

Publikováno v: IEEE Access, Vol 7, Pp 59271-59277 (2019)

Noises exist in digital circuits can be leveraged as the source of entropy to design true random numbers generators (TRNGs), which is an important primitive component in cryptography and hardware-based security applications. In this paper, we present

Externí odkaz: https://doaj.org/article/e36f63e804614a8184325a1804f884db

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An automated test equipment for characterization of emerging MRAM and RRAM arrays

Autor: Paolo Pellati, Ken Mackay, Piero Olivo, Michele Ramponi, Christian Wenger, Alessandro Grossi, Cristian Zambelli, Jérémy Alvarez-Hérault

Publikováno v: IEEE Transactions on Emerging Topics in Computing

In this paper it is presented a test equipment for the characterization of two different emerging memory technologies like the Thermally Assisted Switching-Magnetic Random Access Memory (TAS-MRAM) and the Resistive Random Access Memory (RRAM). The in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ddd1655efdcba863e9333b9ea1bffe2
http://hdl.handle.net/11392/2390750

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Integrating MTJ Devices into a 130nm CMOS Process Flow

Autor: Sagie Rozental, Jeremy Pereira, Krish Mani, Ora Eli, Yami Bouhnik, Ken Mackay, Shimon Greenberg, Jeremy Alvarez Herault, Yifat Cohen, Miryam Buchbinder

Publikováno v: Advances in Science and Technology.

A Magnetic Random Access Memory (MRAM) device was successfully embedded into TowerJazz’s 130nm CMOS platform. The fabricated devices are stand-alone 4Mbit and 1Mbit MRAM memories and Multi-MLU magnetic sensors. This paper will describe the process

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::990ae11477a3f6255777ccea7777e2e3
https://doi.org/10.4028/www.scientific.net/ast.99.81

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Reliability and cell-to-cell variability of TAS-MRAM arrays under cycling conditions

Autor: Jérémy Alvarez-Hérault, Alessandro Grossi, Cristian Zambelli, Ken Mackay, Piero Olivo

Publikováno v: NVMTS

The impact of 500k write cycles on 1kbits TAS-MRAM arrays has been evaluated by extracting a set of characteristic parameters describing the technology in terms of cell-to-cell variability and switching reliability. The relationship between switching

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e484bba2d6b55aa037c31d3d3ff9a20
https://doi.org/10.1109/nvmts.2015.7457476

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Automated characterization of TAS-MRAM test arrays

Autor: Cristian Zambelli, Piero Olivo, Michele Ramponi, Jérémy Alvarez-Hérault, Alessandro Grossi, Paolo Pellati, Ken Mackay

Publikováno v: DTIS

In this work the characterization results of 1kbit TAS-MRAM arrays obtained through RIFLE Automated Test Equipment of 1Kbit array are reported. Such ATE, ensuring flexibility in terms of signals and timing, allowed evaluating hysteresis and to perfor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02f9dec1a20dd40f5bc158ee2227aa44
http://hdl.handle.net/11392/2338147

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Effects of the Heating Current Polarity on the Writing of Thermally Assisted Switching-MRAM

Autor: Ken Mackay, Julien Vidal, I. L. Prejbeanu, Claire Creuzet, C. Portemont, Jérémy Alvarez-Hérault, Antoine Chavent, Bernard Dieny, Ricardo Sousa, Jeremy Pereira

Publikováno v: IEEE Transactions on Magnetics
IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322494⟩
IEEE Transactions on Magnetics, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322494⟩

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6f6b7dd986eaaf9b5d2e08c8cbf035a
https://hal.archives-ouvertes.fr/hal-02131755

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Dynamic Compact Model of Self-Referenced Magnetic Tunnel Junction

Autor: Arnaud Virazel, Ken Mackay, João Azevedo, Jérémy Alvarez-Hérault, Alberto Bosio, Patrick Girard, Luigi Dilillo

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (11), pp.3877-3882. ⟨10.1109/TED.2014.2355418⟩

International audience; Self-referenced magnetic tunnel junction (SR-MTJ) is a magnetic device that offers better characteristics when compared with its contenders. In this paper, electrical behavior of SR-MTJ was modeled using Verilog-AMS language b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4613740b65832050c3c656cf310c5fe0
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01272978

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Barrier Breakdown Mechanisms in MgO-Based Magnetic Tunnel Junctions and Correlation With Low-Frequency Noise

Autor: C. Baraduc, Ricardo Sousa, Ken Mackay, S. Amara-Dababi, Bernard Dieny, Hélène Béa

Publikováno v: International Reliability Physics Symposium
International Reliability Physics Symposium, Jun 2014, Waikoloa, United States. pp.4340-4343, ⟨10.1109/IRPS.2014.6861097⟩

Magnetic tunnel junctions (MTJs) are very attractive for magnetic random access memories (MRAMs), thanks to their combination of non-volatility, speed, low power and endurance. In particular spin transfer torque (STT) RAMs based on STT writing show a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c11bb3eb171922242dde50e379f50b77
https://hal.archives-ouvertes.fr/hal-01959937

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A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs

Autor: Alberto Bosio, Patrick Girard, Aida Todri-Sanial, Luigi Dilillo, Ken Mackay, João Azevedo, Arnaud Virazel, Jérémy Alvarez-Hérault

Publikováno v: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, IEEE, 2014, 22 (11), pp.2326-2335. ⟨10.1109/TVLSI.2013.2294080⟩

International audience; Magnetic random access memory (MRAM) is an emerging technology with potential to become the universal on-chip memory. Among existing MRAM technologies, thermally assisted switching (TAS)-MRAM technology offers several advantag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a94cf9173752a7a85ca036f441670c1
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01248578

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