Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ken MacWilliams"'
Autor:
Mark Neisser, Harry J. Levinson, Stefan Wurm, David Kyser, Takeo Watanabe, Ken Macwilliams, Hidemi Ishiuchi, Walt Trybula, Naoya Hayashi, Ted Fedynyshyn, Craig Higgins, Tsuyoshi Nakamura, Doug Resnick, Moshe Preil, Michael Lercel, Hajime Aoyama, Erik Hosler
Publikováno v:
2021 IEEE International Roadmap for Devices and Systems Outbriefs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2036db670b93477c13593f2b249d78c2
https://doi.org/10.1109/irds54852.2021.00017
https://doi.org/10.1109/irds54852.2021.00017
Autor:
N. Derhacobian, V. Banthia, Mihaela Balseanu, Nitin K. Ingle, Zoran Krivokapic, Shankar Venkataraman, Reza Arghavani, H. M'Saad, Scott E. Thompson, U. Aghoram, Ellie Yieh, Ken MacWilliams, Zheng Yuan, Li-Qun Xia
Publikováno v:
IEEE Transactions on Electron Devices. 54:362-365
Experimental data show that tensile stress improves and compressive stress degrades retention time for nonvolatile memory (NVM) devices. External mechanical tensile stress and compressive stress are introduced into the NVM floating-gate and nitride t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5fc26824826c1a374ab4837657a2a78
https://doi.org/10.1109/ted.2006.888827
https://doi.org/10.1109/ted.2006.888827
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:2757
A dual-layer, oxynitride film stack functions as a universal antireflective layer (UARL) for patterning deep subquarter micron features on transparent dielectric films. The UARL optical constants at 248 nm are n=1.96 and k=0.3 for top layer and n=2.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d911ae74ccd7af72f1b81d9fdc1162aa
https://doi.org/10.1116/1.1319695
https://doi.org/10.1116/1.1319695